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KM68512BLI-L データシート(PDF) 4 Page - Samsung semiconductor |
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KM68512BLI-L データシート(HTML) 4 Page - Samsung semiconductor |
4 / 9 page Revision 0.0 KM68512B Family CMOS SRAM January 1998 4 Advance RECOMMENDED DC OPERATING CONDITIONS 1) Note 1. Commercial Product : TA=0 to 70 °C, unless otherwise specified Industrial Product : TA=-40 to 85 °C, unless otherwise specified 2. Overshoot : VCC+3.0V in case of pulse width≤30ns 3. Undershoot : -3.0V in case of pulse width ≤30ns 4. Overshoot and undershoot is sampled, not 100% tested Item Symbol Min Typ Max Unit Supply voltage Vcc 4.5 5.0 5.5 V Ground Vss 0 0 0 V Input high voltage VIH 2.2 - Vcc+0.5V2) V Input low voltage VIL -0.53) - 0.8 V CAPACITANCE 1)(f=1MHz, TA=25 °C) 1. Capacitance is sampled, not 100% tested Item Symbol Test Condition Min Max Unit Input capacitance CIN VIN=0V - 6 pF Input/Output capacitance CIO VIO=0V - 8 pF DC AND OPERATING CHARACTERISTICS 1. Industrial product = 15 µA Item Symbol Test Conditions Min Typ Max Unit Input leakage current ILI VIN=Vss to Vcc -1 - 1 µA Output leakage current ILO CS1=VIH or CS2=VIL or OE=VIH or WE=VIL, VIO=Vss to Vcc -1 - 1 µA Operating power supply ICC IIO=0mA, CS1=VIL, CS2=VIH, VIN=VIL or VIH, Read - 7 10 mA Average operating current ICC1 Cycle time=1§Á, 100% duty, IIO=0mA CS1 ≤0.2V, CS2≥VCC-0.2V, VIN≤0.2V or VIN≥Vcc -0.2V Read - - 5 mA Write - - 30 mA ICC2 Cycle time=Min, 100% duty, IIO=0mA, CS1=VIL, CS2=VIH, VIN=VIL or VIH - - 60 mA Output low voltage VOL IOL=2.1mA - - 0.4 V Output high voltage VOH IOH=-1.0mA 2.4 - - V Standby Current(TTL) ISB CS1=VIH, CS2=VIL, Other inputs =VIL or VIH - - 3 mA Standby Current (CMOS) ISB1 CS1 ≥Vcc-0.2V, CS2≥Vcc-0.2V or CS2≤0.2V - 1 101) µA |
同様の部品番号 - KM68512BLI-L |
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同様の説明 - KM68512BLI-L |
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