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KM681002CLT-12 データシート(PDF) 8 Page - Samsung semiconductor

部品番号 KM681002CLT-12
部品情報  128Kx8 Bit High-Speed CMOS Static RAM5V Operating. Operated at Commercial and Industrial Temperature Ranges.
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メーカー  SAMSUNG [Samsung semiconductor]
ホームページ  http://www.samsung.com/Products/Semiconductor
Logo SAMSUNG - Samsung semiconductor

KM681002CLT-12 データシート(HTML) 8 Page - Samsung semiconductor

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KM681002C/CL, KM681002CI/CLI
CMOS SRAM
PRELIMINARY
Revision 2.0
- 8 -
March 2000
PRELIMINARY
DATA RETENTION CHARACTERISTICS*(TA=0 to 70
°C)
* The above parameters are also guaranteed at industrial temperature range.
Data Retention Characteristic is for L-ver only.
Parameter
Symbol
Test Condition
Min.
Typ.
Max.
Unit
VCC for Data Retention
VDR
CS
≥VCC-0.2V
2.0
-
5.5
V
Data Retention Current
IDR
VCC=3.0V, CS
≥VCC-0.2V
VIN
≥VCC-0.2V or VIN≤0.2V
-
-
0.4
mA
VCC=2.0V, CS
≥VCC-0.2V
VIN
≥VCC-0.2V or VIN≤0.2V
-
-
0.3
Data Retention Set-Up Time
tSDR
See Data Retention
Wave form(below)
0
-
-
ns
Recovery Time
tRDR
5
-
-
ms
DATA RETENTION WAVE FORM
CS controlled
VCC
4.5V
VIH
VDR
CS
GND
Data Retention Mode
CS
≥VCC - 0.2V
tSDR
tRDR


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