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KM62256CLTG-4 データシート(PDF) 7 Page - Samsung semiconductor |
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KM62256CLTG-4 データシート(HTML) 7 Page - Samsung semiconductor |
7 / 10 page PRELIMINARY Revision 3.0 KM62256C Family CMOS SRAM April 1996 Address Data Out Previous Data Valid Data Valid TIMMING DIAGRAMS TIMING WAVEFORM OF READ CYCLE (1) (Address Controlled) ( CS=OE=VIL, WE=VIH) TIMING WAVEFORM OF READ CYCLE(2) (WE=VIH) Data Valid High-Z CS Address OE Data out NOTES (READ CYCLE) 1. tHZ and tOHZ are defined as the time at which the outputs achieve the open circuit conditions and are not referenced to output voltage levels. 2. At any given temperature and voltage condition, tHZ(max.) is less than tLZ(min.) both for a given device and from device to device. tRC tRC tOH tOH tAA tOE tOLZ tLZ tOHZ tHZ tAA tCO |
同様の部品番号 - KM62256CLTG-4 |
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同様の説明 - KM62256CLTG-4 |
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