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KM62256CLRG-5 データシート(PDF) 8 Page - Samsung semiconductor |
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KM62256CLRG-5 データシート(HTML) 8 Page - Samsung semiconductor |
8 / 10 page PRELIMINARY Revision 3.0 KM62256C Family CMOS SRAM April 1996 TIMING WAVEFORM OF WRITE CYCLE(1) (WE Controlled) TIMING WAVEFORM OF WRITE CYCLE(2) (CS Controlled) Address CS Data Valid WE Data in High-Z High-Z Address CS Data Undefined Data Valid WE Data in Data out Data Valid Data out High-Z High-Z NOTES (WRITE CYCLE) 1. A write occurs during the overlap( tWP) of low CS and low WE. A write begins at the latest transition among CS goes low and WE going low : A write end at the earliest transition among CS going high and WE going high, tWP is measured from the beginning of write to the end of write. 2. tCW is measured from the CS going low to end of write. 3. tAS is measured from the address valid to the beginning of write. 4. tWR is measured from the end of write to the address change. tWR applied in case a write ends as CS or WE going high. tWR(4) tCW(2) tAW tWP(1) tAS(3) tDW tDH tOW tWHZ tWC tWR(4) tCW(2) tWP(1) tDW tDH tAW tAS(3) tWC |
同様の部品番号 - KM62256CLRG-5 |
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同様の説明 - KM62256CLRG-5 |
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