2SC4518 datasheet(1/1 Pages) SANKEN

部品番号	2SC4518

部品情報	Silicon NPN Triple Diffused Planar Transistor(Switching Regulator, Lighting Inverter and General Purpose)

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メーカー	SANKEN [Sanken electric]

ホームページ	http://www.sanken-ele.co.jp/en

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114

Silicon NPN Triple Diffused Planar Transistor (High Voltage Switchihg Transistor)

Application : Switching Regulator, Lighting Inverter and General Purpose

2SC4518/4518A

I C– V CE Characteristics (Typical)

hFE–IC Temperature Characteristics (Typical)

t on•t stg•t f– I C Characteristics (Typical)

θj-a–t Characteristics

I C– V BE Temperature Characteristics (Typical)

VCE(sat),VBE(sat)–IC Temperature Characteristics (Typical)

Pc – T a Derating

Reverse Bias Safe Operating Area

Safe Operating Area (Single Pulse)

0.03

0.1

0.05

11 0

5

0.5

0

1.5

1.0

0.5

Collector Current I C(A)

V BE(sat)

V CE(sat)

I C/I B=5 Const.

0.2

1

0.5

5

0.1

0.5

5

7

1

Collector Current I C(A)

t stg

t on

t f

V CC

250V

I C:I B1:I B2=1:0.15:–0.5

35

30

20

10

2

0

2 5

5 0

7 5

100

125

150

Ambient Temperature Ta(˚C)

Without Heatsink

50

500

1000

100

1

5

0.5

0.1

0.03

0.05

20

10

Collector-Emitter Voltage V CE(V)

Without Heatsink

Natural Cooling

L=3mH

IB2=–1.0A

Duty:less than 1%

2SC4518

2SC4518A

10

50

100

500

1000

1

0.5

0.03

0.05

0.1

10

20

5

Collector-Emitter Voltage V CE(V)

Without Heatsink

Natural Cooling

100

µ

s

0.02

0.1

0.05

1

5

0.5

5

10

50

Collector Current I C(A)

(V CE=4V)

125˚C

25˚C

–55˚C

0

5

1

2

3

4

0

1.2

0.4

0.6

0.8

1.0

0.2

Base-Emittor Voltage V BE(V)

(V CE=4V)

0.3

1

4

0.5

1

1 0

100

1000

Time t(ms)

0

2

1

5

3

4

2

13

4

Collector-Emitter Voltage V CE(V)

600mA

700mA

400mA

150mA

250mA

I B=50mA

sTypical Switching Characteristics (Common Emitter)

VCC

(V)

250

RL

(

Ω)

139

IC

(A)

1.8

VBB2

(V)

–5

IB2

(A)

–0.9

ton

(

µs)

0.7max

tstg

(

µs)

4max

tf

(

µs)

0.5max

IB1

(A)

0.27

VBB1

(V)

10

Symbol

VCBO

VCEO

VEBO

IC

IB

PC

Tj

Tstg

2SC4518 2SC4518A

900

1000

550

7

5(Pulse10)

2.5

35(Tc=25°C)

150

–55 to +150

Unit

V

A

W

°C

sAbsolute maximum ratings

sElectrical Characteristics

Symbol

ICBO

IEBO

V(BR)CEO

hFE

VCE(sat)

VBE(sat)

fT

COB

2SC4518 2SC4518A

100max

550min

10 to 25

0.5max

1.2max

6typ

50typ

Unit

µA

V

MHz

pF

Conditions

VCB=800V

VEB=7V

IC=10mA

VCE=4V, IC=1.8A

IC=1.8A, IB=0.36A

VCE=12V, IE=–0.35A

VCB=10V, f=1MHz

(Ta=25°C)

External Dimensions FM20(TO220F)

ø3.3±0.2

10.1±0.2

2.54

1.35±0.15

0.85

+0.2

-0.1

1.35±0.15

2.2±0.2

4.2±0.2

2.8

c0.5

2.4±0.2

0.45

+0.2

-0.1

BE

C

a

b

Weight : Approx 2.0g

a. Part No.

b. Lot No.

Ratings

同様の部品番号 - 2SC4518

メーカー	部品番号	データシート	部品情報
Savantic, Inc.	2SC4518	240Kb / 4P	Silicon NPN Power Transistors
Quanzhou Jinmei Electro...	2SC4518	183Kb / 4P	Silicon NPN Power Transistors
Inchange Semiconductor ...	2SC4518	154Kb / 4P	Silicon NPN Power Transistors
Sanken electric	2SC4518	32Kb / 1P	Silicon NPN Triple Diffused Planar Transistor
Savantic, Inc.	2SC4518	242Kb / 4P	Silicon NPN Power Transistors

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