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ISL12022MA データシート(PDF) 5 Page - Intersil Corporation

部品番号 ISL12022MA
部品情報  Low Power RTC with Battery Backed SRAM, Integrated 짹5ppm Temperature Compensation and Auto Daylight Saving
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メーカー  INTERSIL [Intersil Corporation]
ホームページ  http://www.intersil.com/cda/home
Logo INTERSIL - Intersil Corporation

ISL12022MA データシート(HTML) 5 Page - Intersil Corporation

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ISL12022MA
5
FN7575.1
July 9, 2010
Absolute Maximum Ratings
Thermal Information
Voltage on VDD, VBAT and IRQ/FOUT pins
(Respect to Ground) . . . . . . . . . . . . . . . . . -0.3V to 6.0V
Voltage on SCL and SDA pins
(Respect to Ground) . . . . . . . . . . . . -0.3V to VDD +0.3V
ESD Rating
Human Body Model (Per JESD22-A114F) . . . . . . . . . . >3kV
Machine Model (Per JESD22-A115B) . . . . . . . . . . . . >300V
Charge Device Model (Per JESD22-C101D) . . . . . . . . 2.2kV
Latch Up (Tested per JESD-78B; Class 2, Level A). . . . 100mA
Shock Resistance. . . . . . . . . . . . . . . .5000g, 0.3ms, 1/2 sine
Vibration (Ultrasound cleaning not advised) . . 20g/10-2000Hz,
Thermal Resistance (Typical)
θJA (°C/W) θJC (°C/W)
20 Lead SOIC (Notes 4, 5) . . . . . .
70
35
Storage Temperature. . . . . . . . . . . . . . . . . -40°C to +85°C
Pb-Free Reflow Profile (Note 6). . . . . . . . . . . .see link below
http://www.intersil.com/pbfree/Pb-FreeReflow.asp
CAUTION: Do not operate at or near the maximum ratings listed for extended periods of time. Exposure to such conditions may adversely impact
product reliability and result in failures not covered by warranty.
NOTES:
4. θJA is measured with the component mounted on a high effective thermal conductivity test board in free air. See Tech Brief
TB379 for details.
5. For θJC, the “case temp” location is on top of the package and measured in the center of the package between pins 6 and 15.
6. The ISL12022MA Oscillator Initial Accuracy can change after solder reflow attachment. The amount of change will depend on
the reflow temperature and length of exposure. A general rule is to use only one reflow cycle and keep the temperature and
time as short as possible. Changes on the order of ±1ppm to ±3ppm can be expected with typical reflow profiles.
DC Operating Characteristics RTC Test Conditions: VDD = +2.7 to +5.5V, TA = -40°C to +85°C, unless otherwise
stated. Boldface limits apply over the operating temperature range, -40°C to +85°C.
SYMBOL
PARAMETER
CONDITIONS
MIN
(Note 7)
TYP
(Note 8)
MAX
(Note 7) UNITS NOTES
VDD
Main Power Supply
(Note 15)
2.7
5.5
V
VBAT
Battery Supply Voltage
(Note 15)
1.8
5.5
V9
IDD1
Supply Current. (I2CNot Active,
Temperature Conversion Not
Active, FOUT Not Active)
VDD = 5V
4.1
7
µA
10, 11
VDD = 3V
3.5
6
µA
10, 11
IDD2
Supply Current. (I2C Active,
Temperature Conversion Not
Active, Fout Not Active)
VDD = 5V
200
500
µA
10, 11
IDD3
Supply Current. (I2CNot Active,
Temperature Conversion Active,
FOUT Not Active)
VDD = 5V
120
400
µA
10, 11
IBAT
Battery Supply Current
VDD = 0V, VBAT = 3V,
TA =+25°C
1.0
1.6
µA
10
VDD = 0V, VBAT = 3V
1.0
5.0
µA
10
IBATLKG Battery Input Leakage
VDD = 5.5V, VBAT = 1.8V
100
nA
ILI
Input Leakage Current on SCL
VIL = 0V, VIH = VDD
-1.0
±0.1
1.0
µA
ILO
I/O Leakage Current on SDA
VIL = 0V, VIH = VDD
-1.0
±0.1
1.0
µA
VBATM
Battery Level Monitor Threshold
-100
+100
mV
VPBM
Brownout Level Monitor Threshold
-100
+100
mV
VTRIP
VBAT Mode Threshold
(Note 15)
2.0
2.2
2.4
V
VTRIPHYS VTRIP Hysteresis
30
mV
13
VBATHYS VBAT Hysteresis
50
mV
13
ΔFoutT
Oscillator Stability vs Temperature VDD = 3.3V
-5
+5
ppm
6
ΔFoutV
Oscillator Stability vs Voltage
2.7V ≤ VDD ≤ 5.5V
-3
+3
ppm
ΔFoutI
Oscillator Initial Accuracy
VDD = 3.3V
-3
+3
ppm
6


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