ISL22329WFU10Z datasheet(4/13 Pages) INTERSIL

部品番号	ISL22329WFU10Z

部品情報	Dual Digitally Controlled Potentiometers XDCP

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メーカー	INTERSIL [Intersil Corporation]

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4

FN6330.2

September 4, 2009

Operating Specifications Over the recommended operating conditions unless otherwise specified.

SYMBOL

PARAMETER

TEST CONDITIONS

MIN

(Note 13)

TYP

(Note 3)

MAX

(Note 13)

UNIT

ICC1

VCC Supply Current (volatile

write/read)

10k DCP, fSCL = 400kHz; (for I

2C active,

read and write states)

1.4

mA

VCC Supply Current (volatile

write/read, non-volatile read)

50k DCP, fSCL = 400kHz; (for I

2C active,

read and write states)

450

µA

ICC2

VCC Supply Current ( non-volatile

write/read)

10k DCP, fSCL = 400kHz; (for I

2C active,

read and write states)

3.5

mA

VCC Supply Current (non-volatile

write/read)

50k DCP, fSCL = 400kHz; (for I

2C active,

read and write states)

2.0

mA

ISB

VCC Current (standby)

VCC = +5.5V , 10k DCP, I

2C interface in

standby state

1.22

mA

VCC = +3.6V, 10k DCP, I

2C interface in

standby state

800

µA

VCC = +5.5V, 50k DCP, I

2C interface in

standby state

320

µA

VCC = +3.6V, 50k DCP, I

2C interface in

standby state

250

µA

ISD

VCC Current (shutdown)

VCC = +5.5V @ +85°C, I

2C interface in

standby state

3µA

VCC = +5.5V @ +125°C, I

2C interface in

standby state

5µA

VCC = +3.6V @ +85°C, I

2C interface in

standby state

2µA

VCC = +3.6V @ +125°C, I

2C interface in

standby state

4µA

ILkgDig

Leakage Current, at Pins A0, A1, A2,

SHDN, SDA, and SCL

Voltage at pin from GND to VCC

-1

1

µA

tWRT

(Note 11)

DCP Wiper Response Time

SCL falling edge of last bit of DCP data byte

to wiper new position

1.5

µs

tShdnRec

(Note 11)

DCP Recall Time From Shutdown

Mode

From rising edge of SHDN signal to wiper

stored position and RH connection

1.5

µs

SCL falling edge of last bit of ACR data byte

to wiper stored position and RH connection

1.5

µs

Vpor

Power-on Recall Voltage

Minimum VCC at which memory recall

occurs

2.0

2.6

V

VccRamp

VCC Ramp Rate

0.2

V/ms

tD

Power-up Delay

VCC above Vpor, to DCP Initial Value

Register recall completed, and I2C Interface

in standby state

3ms

EEPROM SPECIFICATION

EEPROM Endurance

1,000,000

Cycles

EEPROM Retention

Temperature T < +55°C

50

Years

tWC

(Note 12)

Non-volatile Write Cycle Time

12

20

ms

ISL22329

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