2SK2348

Ordering number : EN5415A

High-Voltage, High-Speed

Switching Applications

N-Channel Silicon MOSFET

SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquarters

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110 JAPAN

72597TS (KOTO) TA-1033 No.5415-1/4

Package Dimensions

unit: mm

2131-TO-3JML

[2SK2348]

SANYO: TO-3JML

1 : Gate

2 : Drain

3 : Source

Specifications

Parameter

Symbol

Conditions

Ratings

Unit

Drain-to-Source Voltage

VDSS

1200

V

Gate-to-Source Voltage

VGSS

±30

V

Drain Current (DC)

ID

14

A

Drain Current (pulse)

IDP

PW

≤10µs, duty cycle≤1%

28

A

Allowable Power Dissipation

PD

4.6

W

Tc=25°C

160

W

Channel Temperature

Tch

150

°C

Storage temperature

Tstg

–55 to +150

°C

Parameter

Symbol

Conditions

Ratings

min

typ

max

Unit

D-S Breakdown Voltage

V(BR)DSS

ID=1mA, VGS=0

1200

V

Zero-Gate Voltage Drain Current IDSS

VDS=1200V, VGS=0

1.0

mA

Gate-to Source Leak Current

IGSS

VGS=±30V, VDS=0

±100

nA

Cutoff Voltage

VGS(off)

VDS=10V, ID=1mA

1.5

3.5

V

Forward Transfer Admittance

|yfs|VDS=20V, ID=7A

3.0

6.0

S

Static Drain-to-Source

RDS(on)

ID=7A, VGS=10V

1.0

1.5

Ω

ON-State Resistance

Input Capacitance

Ciss

VDS=20V, f=1MHz

3000

pF

Output Capacitance

Coss

VDS=20V, f=1MHz

500

pF

Reverse Transfer Capacitance

Crss

VDS=20V, f=1MHz

250

pF

Continued on next page.

Features

• Low ON resistance, ultrahigh-speed switching.

• High reliability (Adoption of HVP process).