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TPC8020-H データシート(PDF) 1 Page - Toshiba Semiconductor

部品番号 TPC8020-H
部品情報  Field Effect Transistor Silicon N-Channel MOS Type (Ultra-High-Speed U-MOSIII)
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メーカー  TOSHIBA [Toshiba Semiconductor]
ホームページ  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

TPC8020-H データシート(HTML) 1 Page - Toshiba Semiconductor

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TPC8020-H
2006-11-16
1
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (Ultra-High-Speed U-MOSIII)
TPC8020-H
High-Efficiency DC/DC Converter Applications
Notebook PC Applications
Portable Equipment Applications
• Small footprint due to a small and thin package
• High-speed switching
• Small gate charge: QSW = 6.9 nC (typ.)
• Low drain-source ON- resistance: RDS (ON) = 6.8 mΩ (typ.)
• High forward transfer admittance: |Yfs| =32 S (typ.)
• Low leakage current: IDSS = 10 µA (max) (VDS = 30 V)
• Enhancement mode: Vth = 1.1 to 2.3 V (VDS = 10 V, ID = 1 mA)
Absolute Maximum Ratings (Ta
= 25°C)
Characteristic
Symbol
Rating
Unit
Drain-source voltage
VDSS
30
V
Drain-gate voltage (RGS = 20 kΩ)
VDGR
30
V
Gate-source voltage
VGSS
±20
V
DC
(Note 1)
ID
13
Drain current
Pulsed (Note 1)
IDP
52
A
Drain power dissipation
(t
= 10 s)
(Note 2a)
PD
1.9
W
Drain power dissipation
(t
= 10 s)
(Note 2b)
PD
1.0
W
Single-pulse avalanche energy
(Note 3)
EAS
110
mJ
Avalanche current
IAR
13
A
Repetitive avalanche energy
(Note 2a) (Note 4)
EAR
0.084
mJ
Channel temperature
Tch
150
°C
Storage temperature range
Tstg
−55 to 150
°C
Note: For Notes 1 to 4, refer to the next page.
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and
Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
This transistor is an electrostatic-sensitive device. Handle with care.
Unit: mm
JEDEC
JEITA
TOSHIBA
2-6J1B
Weight: 0.085 g (typ.)
Circuit Configuration
8
6
1
2
3
7
5
4


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