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データシートサーチシステム |
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データシートサーチシステム |
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2SK3412 データシート(PDF) 2 Page - Sanyo Semicon Device |
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2SK3412 データシート(HTML) 2 Page - Sanyo Semicon Device |
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2 / 4 page  2SK3412 No.7176-2/4 Specifications Absolute Maximum Ratings at Ta=25 °C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS 60 V Gate-to-Source Voltage VGSS ±20 V Drain Current (DC) ID 14 A Drain Current (Pulse) IDP PW ≤10µs, duty cycle≤1% 52 A Allowable Power Dissipation PD 1W Tc=25 °C20 W Channel Temperature Tch 150 °C Storage Temperature Tstg --55 to +150 °C Electrical Characteristics at Ta=25 °C Ratings Parameter Symbol Conditions min typ max Unit Drain-to-Source Breakdown Voltage V(BR)DSS ID=1mA, VGS=0 60 V Zero-Gate Voltage Drain Current IDSS VDS=60V, VGS=0 10 µA Gate-to-Source Leakage Current IGSS VGS=±16V, VDS=0 ±10 µA Cutoff Voltage VGS(off) VDS=10V, ID=1mA 1.0 2.4 V Forward Transfer Admittance yfs VDS=10V, ID=7A 8 11 S RDS(on)1 ID=7A, VGS=10V 48 62 m Ω Static Drain-to-Source On-State Resistance RDS(on)2 ID=7A, VGS=4V 64 90 m Ω Input Capacitance Ciss VDS=20V, f=1MHz 550 pF Output Capacitance Coss VDS=20V, f=1MHz 170 pF Reverse Transfer Capacitance Crss VDS=20V, f=1MHz 60 pF Turn-ON Delay Time td(on) See specified Test Circuit. 9 ns Rise Time tr See specified Test Circuit. 12 ns Turn-OFF Delay Time td(off) See specified Test Circuit. 95 ns Fall Time tf See specified Test Circuit. 20 ns Total Gate Charge Qg VDS=10V, VGS=10V, ID=14A 19 nC Gate-to-Source Charge Qgs VDS=10V, VGS=10V, ID=14A 3 nC Gate-to-Drain “Miller” Charge Qgd VDS=10V, VGS=10V, ID=14A 4.2 nC Diode Forward Voltage VSD IS=14A, VGS=0 0.94 1.2 V Switching Time Test Circuit PW=10 µs D.C. ≤1% 10V 0V VIN P.G 50 Ω G S ID=7A RL=4.29Ω VDD=30V VOUT VIN D 2SK3412 |
同様の部品番号 - 2SK3412 |
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同様の説明 - 2SK3412 |
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