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STP85NF55L データシート(PDF) 3 Page - STMicroelectronics |
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STP85NF55L データシート(HTML) 3 Page - STMicroelectronics |
3 / 14 page STB85NF55L, STP85NF55L Electrical ratings Doc ID 8544 Rev 8 3/14 1 Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter Value Unit VDS Drain-source voltage (VGS = 0) 55 V VGS Gate-source voltage ± 15 V ID (1) 1. Current limited by package Drain current (continuous) at TC = 25 °C 80 A ID (1) Drain current (continuous) at TC=100 °C 80 A IDM (2) 2. Pulse width limited by safe operating area Drain current (pulsed) 320 A PTOT Total dissipation at TC = 25 °C 300 W Derating factor 2.0 W/°C dv/dt (3) 3. ISD ≤ 80 A, di/dt ≤ 300 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX Peak diode recovery voltage slope 10 V/ns EAS (4) 4. Starting TJ = 25 °C, ID = 40 A, VDD = 40 V Single pulse avalanche energy 980 mJ TJ Tstg Operating junction temperature Storage temperature -55 to 175 °C Table 3. Thermal data Symbol Parameter Value Unit D2PAK TO-220 Rthj-case Thermal resistance junction-case max. 0.5 °C/W Rthj-amb Thermal resistance junction-ambient max. 62.5 °C/W Rthj-pcb Thermal resistance junction-pcb max. (1) 1. When mounted on 1inch² FR-4 2Oz Cu board 35 °C/W Tl Maximum lead temperature for soldering purpose 300 °C |
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同様の説明 - STP85NF55L |
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