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STP25NM50N データシート(PDF) 1 Page - STMicroelectronics |
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STP25NM50N データシート(HTML) 1 Page - STMicroelectronics |
1 / 18 page November 2008 Rev 13 1/18 18 STx25NM50N N-channel 500 V, 0.11 Ω, 22 A MDmesh™ II Power MOSFET TO-220, TO-220FP, I2PAK, D2PAK, TO-247 Features ■ 100% avalanche tested ■ Low input capacitance and gate charge ■ Low gate input resistance Application ■ Switching applications Description This series of devices is realized with the second generation of MDmesh™ Technology. This revolutionary MOSFET associates a new vertical structure to the Company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters. Figure 1. Internal schematic diagram Type VDSS (@Tjmax) RDS(on) max ID STB25NM50N 550 V < 0.140 Ω 22 A STB25NM50N-1 550 V < 0.140 Ω 22 A STF25NM50N 550 V < 0.140 Ω 22 A(1) 1. Limited only by maximum temperature allowed STP25NM50N 550 V < 0.140 Ω 22 A STW25NM50N 550 V < 0.140 Ω 22 A 1 2 3 1 2 3 1 3 1 2 3 1 2 3 TO-220FP TO-220 I²PAK D²PAK TO-247 Table 1. Device summary Order codes Marking Package Packaging STB25NM50N B25NM50N D2PAK Tape and reel STB25NM50N-1 B25NM50N I2PAK Tube STF25NM50N F25NM50N TO-220FP Tube STP25NM50N P25NM50N TO-220 Tube STW25NM50N W25NM50N TO-247 Tube www.st.com |
同様の部品番号 - STP25NM50N |
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同様の説明 - STP25NM50N |
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