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STFW4N150 データシート(PDF) 4 Page - STMicroelectronics

部品番号 STFW4N150
部品情報  N-channel 1500 V, 5 廓, 4 A, PowerMESH??Power MOSFET in TO-220, TO-247, TO-3PF
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メーカー  STMICROELECTRONICS [STMicroelectronics]
ホームページ  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STFW4N150 データシート(HTML) 4 Page - STMicroelectronics

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Electrical characteristics
STFW4N150, STP4N150, STW4N150
4/15
Doc ID 11262 Rev 9
2
Electrical characteristics
(TCASE = 25 °C unless otherwise specified)
Table 5.
On/off states
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
V(BR)DSS
Drain-source
Breakdown voltage
ID = 1 mA, VGS = 0
1500
V
IDSS
Zero gate voltage
Drain current (VGS = 0)
VDS = Max rating
VDS = Max rating, TC = 125 °C
10
500
µA
µA
IGSS
Gate-body leakage
current (VDS = 0)
VGS = ± 30 V
± 100
nA
VGS(th)
Gate threshold voltage
VDS = VGS, ID = 250 µA
3
4
5
V
RDS(on
Static drain-source on
resistance
VGS = 10 V, ID = 2 A
5
7
Table 6.
Dynamic
Symbol
Parameter
Test conditions
Min. Typ. Max.
Unit
gfs
(1)
1.
Pulsed: pulse duration=300 µs, duty cycle 1.5%
Forward transconductance
VDS = 30 V, ID = 2 A
-
3.5
S
Ciss
Coss
Crss
Input capacitance
Output capacitance
Reverse transfer
capacitance
VDS = 25 V, f = 1 MHz,
VGS = 0
-
1300
120
12
pF
pF
pF
td(on)
Tr
td(off)
tf
Turn-on delay time
Rise time
Turn-off delay time
Fall time
VDD = 750 V, ID = 2 A,
RG = 4.7 Ω, VGS = 10 V
Figure 19
-
35
30
45
45
ns
ns
ns
ns
Qg
Qgs
Qgd
Total gate charge
Gate-source charge
Gate-drain charge
VDD = 600 V, ID = 4 A,
VGS = 10 V
Figure 20
-
30
10
9
50
nC
nC
nC


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