STGP14NC60KD datasheet(5/16 Pages) STMICROELECTRONICS

部品番号	STGP14NC60KD

部品情報	14 A, 600 V - short-circuit rugged IGBT

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5 / 16 page

STGB14NC60KD, STGF14NC60KD, STGP14NC60KD

Electrical characteristics

Doc ID 11424 Rev 7

5/16

Table 6.

Switching on/off (inductive load)

Symbol

Parameter

Test conditions

Min.

Typ.

Max. Unit

td(on)

tr

(di/dt)on

Turn-on delay time

Current rise time

Turn-on current slope

VCC = 390 V, IC = 7 A

RG= 10 Ω, VGE= 15 V,

(see Figure 18)

-

22.5

8.5

700

-

ns

A/µs

td(on)

tr

(di/dt)on

Turn-on delay time

Current rise time

Turn-on current slope

VCC = 390 V, IC = 7 A

RG= 10 Ω, VGE= 15 V,

Tj= 125 °C

(see Figure 18)

-

22

9.5

680

-

ns

A/µs

tr(Voff)

td(off)

tf

Off voltage rise time

Turn-off delay time

Current fall time

Vcc = 390 V, IC = 7 A,

RGE = 10 Ω, VGE = 15 V

(see Figure 18)

-

60

116

75

-

ns

tr(Voff)

td(off)

tf

Off voltage rise time

Turn-off delay time

Current fall time

Vcc = 390 V, IC = 7 A,

RGE = 10 Ω, VGE = 15 V

Tj= 125 °C

(see Figure 18)

-

24

196

144

-

ns

Table 7.

Switching energy (inductive load)

Symbol

Parameter

Test conditions

Min

Typ.

Max

Unit

Eon (1)

Eoff

(2)

Ets

1.

Eon is the turn-on losses when a typical diode is used in the test circuit. If the IGBT is offered in a package

with a co-pack diode, the co-pack diode is used as external diode. IGBTs and DIODE are at the same

temperature (25°C and 125°C)

2.

Turn-off losses include also the tail of the collector current.

Turn-on switching losses

Turn-off switching losses

Total switching losses

VCC = 390 V, IC = 7 A

RG= 10 Ω, VGE= 15 V,

(see Figure 18)

-

82

155

237

-

µJ

Eon (1)

Eoff

(2)

Ets

Turn-on switching losses

Turn-off switching losses

Total switching losses

VCC = 390 V, IC = 7 A

RG= 10 Ω, VGE= 15 V,

Tj= 125 °C

(see Figure 18)

-

131

370

501

-

µJ

Table 8.

Collector-emitter diode

Symbol

Parameter

Test conditions

Min

Typ.

Max

Unit

VF

Forward on-voltage

IF = 7 A

IF = 7 A, TC= 125 °C

1.8

1.3

2.1

V

trr

Qrr

Irrm

Reverse recovery time

Reverse recovery charge

Reverse recovery current

IF = 7 A, VR = 40 V,

di/dt = 100 A/µs

(see Figure 21)

37

40

2.1

ns

nC

A

trr

Qrr

Irrm

Reverse recovery time

Reverse recovery charge

Reverse recovery current

IF = 7 A, VR = 40 V,

Tj = 125 °C,

di/dt = 100 A/µs

(see Figure 21)

61

98

3.2

ns

nC

A

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