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STD3NK100Z データシート(PDF) 4 Page - STMicroelectronics |
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STD3NK100Z データシート(HTML) 4 Page - STMicroelectronics |
4 / 16 page Electrical characteristics STF3NK100Z - STP3NK100Z - STD3NK100Z 4/16 2 Electrical characteristics (TCASE=25°C unless otherwise specified) Table 5. On/off Symbol Parameter Test conditions Min. Typ. Max. Unit V(BR)DSS Drain-source breakdown voltage ID = 1mA, VGS= 0 1000 V IDSS Zero gate voltage drain current (VGS = 0) VDS = Max rating, VDS = Max rating,Tc=125°C 1 50 µA µA IGSS Gate body leakage current (VDS = 0) VGS = ± 20V ± 10 µA VGS(th) Gate threshold voltage VDS= VGS, ID = 50µA 3 3.75 4.5 V RDS(on) Static drain-source on resistance VGS= 10V, ID= 1.25A 5.4 6 Ω Table 6. Dynamic Symbol Parameter Test conditions Min. Typ. Max. Unit gfs (1) 1. Pulsed: pulse duration = 300µs, duty cycle 1.5% Forward transconductance VDS =15V, ID = 1.25A 2.4 S Ciss Coss Crss Input capacitance Output capacitance Reverse transfer capacitance VDS =25V, f=1 MHz, VGS=0 601 53 12 pF pF pF Coss eq. (2) 2. Coss eq. is defined as constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS Equivalent output capacitance VGS =0V, VDS =0V to 800V 15 pF RG Gate input resistance f=1 MHz, open drain 8.6 Ω Qg Qgs Qgd Total gate charge Gate-source charge Gate-drain charge VDD=800V, ID = 2.5A VGS =10V (see Figure 17) 18 3.6 9.2 nC nC nC |
同様の部品番号 - STD3NK100Z |
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同様の説明 - STD3NK100Z |
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