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STP2NK100Z データシート(PDF) 4 Page - STMicroelectronics

部品番号 STP2NK100Z
部品情報  N-channel 1000 V, 6.25 廓, 1.85 A, TO-220, DPAK, IPAK Zener-protected SuperMESH??Power MOSFET
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メーカー  STMICROELECTRONICS [STMicroelectronics]
ホームページ  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STP2NK100Z データシート(HTML) 4 Page - STMicroelectronics

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Electrical characteristics
STD2NK100Z - STP2NK100Z - STU2NK100Z
4/16
2
Electrical characteristics
(TCASE=25°C unless otherwise specified)
Table 5.
On/off states
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
V(BR)DSS
Drain-source breakdown
voltage
ID = 1 mA, VGS= 0
1000
V
IDSS
Zero gate voltage drain
current (VGS = 0)
VDS = Max rating,
VDS = Max rating,Tc=125 °C
1
50
µA
µA
IGSS
Gate body leakage current
(VDS = 0)
VGS = ± 30 V
±
10
µA
VGS(th)
Gate threshold voltage
VDS= VGS, ID = 50 µA
3
3.75
4.5
V
RDS(on)
Static drain-source on
resistance
VGS= 10 V, ID= 0.9 A
6.25
8.5
Table 6.
Dynamic
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
gfs
(1)
1.
Pulsed: pulse duration = 300 µs, duty cycle 1.5%
Forward transconductance
VDS =15 V, ID = 0.9 A
2.4
S
Ciss
Coss
Crss
Input capacitance
Output capacitance
Reverse transfer
capacitance
VDS =25 V, f=1 MHz, VGS=0
499
53
9
pF
pF
pF
Coss eq.
(2)
2.
Coss eq. is defined as constant equivalent capacitance giving the same charging time as Coss when VDS
increases from 0 to 80% VDSS
Equivalent output
capacitance
VGS =0, VDS =0 to 800 V
28
pF
RG
Gate input resistance
f=1 MHz, open drain
6.6
Qg
Qgs
Qgd
Total gate charge
Gate-source charge
Gate-drain charge
VDD=800 V, ID = 1.85 A
VGS =10 V
(see Figure 17)
16
3
9
nC
nC
nC


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