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BC817-40LT1G データシート(PDF) 1 Page - ON Semiconductor |
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BC817-40LT1G データシート(HTML) 1 Page - ON Semiconductor |
1 / 10 page © Semiconductor Components Industries, LLC, 2010 October, 2010 − Rev. 11 1 Publication Order Number: BC817−16LT1/D BC817-16LT1G, BC817-25LT1G, BC817-40LT1G General Purpose Transistors NPN Silicon Features • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant MAXIMUM RATINGS Rating Symbol Value Unit Collector − Emitter Voltage VCEO 45 V Collector − Base Voltage VCBO 50 V Emitter − Base Voltage VEBO 5.0 V Collector Current − Continuous IC 500 mAdc THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Total Device Dissipation FR− 5 Board, (Note 1) TA = 25°C Derate above 25°C PD 225 1.8 mW mW/°C Thermal Resistance, Junction−to−Ambient RqJA 556 °C/W Total Device Dissipation Alumina Substrate, (Note 2) TA = 25°C Derate above 25°C PD 300 2.4 mW mW/°C Thermal Resistance, Junction−to−Ambient RqJA 417 °C/W Junction and Storage Temperature TJ, Tstg −55 to +150 °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. FR−5 = 1.0 x 0.75 x 0.062 in. 2. Alumina = 0.4 x 0.3 x 0.024 in 99.5% alumina. http://onsemi.com See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet. ORDERING INFORMATION COLLECTOR 3 1 BASE 2 EMITTER SOT−23 CASE 318 STYLE 6 1 2 3 1 6x M G G 6x = Device Code x = A, B, or C M = Date Code* G =Pb−Free Package MARKING DIAGRAM (Note: Microdot may be in either location) *Date Code orientation and/or overbar may vary depending upon manufacturing location. |
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