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BC846BDW1T1D データシート(PDF) 9 Page - ON Semiconductor

部品番号 BC846BDW1T1D
部品情報  Dual General Purpose Transistors
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メーカー  ONSEMI [ON Semiconductor]
ホームページ  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

BC846BDW1T1D データシート(HTML) 9 Page - ON Semiconductor

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BC846BDW1T1G, BC847BDW1T1G, BC848CDW1T1G
http://onsemi.com
9
Figure 34. Thermal Response
t, TIME (ms)
1.0
1.0
0
0.1
0.01
0.001
10
100
1.0k
10k
100k
Figure 35. Active Region Safe Operating Area
VCE, COLLECTOR-EMITTER VOLTAGE (V)
-200
-1.0
TA = 25°C
D = 0.5
0.2
0.1
0.05
SINGLE PULSE
BONDING WIRE LIMIT
THERMAL LIMIT
SECOND BREAKDOWN LIMIT
3 ms
TJ = 25°C
ZqJA(t) = r(t) RqJA
RqJA = 3285C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) − TC = P(pk) RqJC(t)
t1
t2
P(pk)
DUTY CYCLE, D = t1/t2
-100
-50
-10
-5.0
-2.0
-5.0
-10
-30 -45 -65
-100
1 s
BC558
BC557
BC556
The safe operating area curves indicate IC−VCE limits
of the transistor that must be observed for reliable
operation. Collector load lines for specific circuits must
fall below the limits indicated by the applicable curve.
The data of Figure 35 is based upon TJ(pk) = 150°C; TC
or TA is variable depending upon conditions. Pulse
curves are valid for duty cycles to 10% provided TJ(pk)
150
°C. TJ(pk) may be calculated from the data in
Figure 34. At high case or ambient temperatures,
thermal limitations will reduce the power that can be
handled to values less than the limitations imposed by the
secondary breakdown.
1.0M
0.02
0.01
ORDERING INFORMATION
Device
Markings
Package
Shipping
BC846BDW1T1G
1B
SOT−363
(Pb−Free)
3000 / Tape & Reel
BC847BDW1T1G
1F
SOT−363
(Pb−Free)
3000 / Tape & Reel
BC847BDW1T3G
1F
SOT−363
(Pb−Free)
10000 / Tape & Reel
BC847CDW1T1G
1G
SOT−363
(Pb−Free)
3000 / Tape & Reel
BC848CDW1T1G
1L
SOT−363
(Pb−Free)
3000 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.


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