BC846BPDW1T1 datasheet(4/17 Pages) ONSEMI

部品番号	BC846BPDW1T1

部品情報	Dual General Purpose Transistors

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BC846BPDW1T1G, BC847BPDW1T1G, BC848CPDW1T1G

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4

TYPICAL NPN CHARACTERISTICS − BC846

Figure 1. DC Current Gain vs. Collector

Current

Figure 2. Collector Emitter Saturation Voltage

vs. Collector Current

IC, COLLECTOR CURRENT (A)

1

0.1

0.01

0.001

0

100

200

300

400

500

0.1

0.01

0.001

0.0001

0

0.05

0.10

0.15

0.20

0.25

0.30

Figure 3. Base Emitter Saturation Voltage vs.

Collector Current

Figure 4. Base Emitter Voltage vs. Collector

Current

IC, COLLECTOR CURRENT (A)

0.1

0.01

0.001

0.0001

0.2

0.3

0.5

0.6

0.7

0.8

1.0

1.1

0.1

0.01

0.001

0.0001

0.2

0.3

0.5

0.6

0.8

0.9

1.0

1.2

VCE = 1 V

150°C

−55°C

25°C

IC/IB = 20

150°C

−55°C

25°C

0.4

0.9

IC/IB = 20

150°C

−55°C

25°C

VCE = 5 V

150°C

−55°C

25°C

0.4

0.7

1.1

Figure 5. Collector Saturation Region

IB, BASE CURRENT (mA)

Figure 6. Base−Emitter Temperature Coefficient

IC, COLLECTOR CURRENT (mA)

-1.0

1.2

1.6

2.0

0.02

1.0

10

0

20

0.1

0.4

0.8

0.2

2.0

10

200

1.0

TA = 25°C

200 mA

50 mA

IC =

10 mA

0.05

0.2

0.5

2.0

5.0

100 mA

20 mA

-1.4

-1.8

-2.2

-2.6

-3.0

0.5

5.0

20

50

100

-55

°C to 125°C

qVB for VBE

同様の部品番号 - BC846BPDW1T1

メーカー	部品番号	データシート	部品情報
ON Semiconductor	BC846BPDW1T1	166Kb / 10P	Dual General Purpose Transistors(NPN/PNP Duals) June, 2004 ??Rev. 3
	BC846BPDW1T1	338Kb / 11P	GreenBridge 2 Series of High-Efficiency Bridge Rectifiers June, 2020 ??Rev. 2
	BC846BPDW1T1G	178Kb / 17P	Dual General Purpose Transistors October, 2013 ??Rev. 9
	BC846BPDW1T1G	142Kb / 17P	Dual General Purpose Transistors April, 2016 ??Rev. 12

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