BC847CDXV6T1 datasheet(4/5 Pages) ONSEMI

部品番号	BC847CDXV6T1

部品情報	Dual General Purpose Transistors

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メーカー	ONSEMI [ON Semiconductor]

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BC847CDXV6T1, BC847CDXV6T5 BC848CDXV6T1, BC848CDXV6T5

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4

TYPICAL CHARACTERISTICS

Figure 5. Collector Saturation Region

IB, BASE CURRENT (mA)

Figure 6. Base−Emitter Temperature Coefficient

IC, COLLECTOR CURRENT (mA)

1.6

1.2

2.0

2.8

2.4

1.2

1.6

2.0

0.02

1.0

10

0

20

0.1

0.4

0.8

0.2

1.0

10

100

-55

°C to +125°C

TA = 25°C

IC = 50 mA

IC = 100 mA

IC = 200 mA

IC =

20 mA

IC =

10 mA

1.0

Figure 7. Capacitances

VR, REVERSE VOLTAGE (VOLTS)

10

Figure 8. Current−Gain − Bandwidth Product

IC, COLLECTOR CURRENT (mAdc)

0.4

0.6

1.0

10

20

1.0

2.0

6.0

40

80

100

200

300

400

60

20

40

30

7.0

5.0

3.0

2.0

0.7

1.0

10

20

2.0

50

30

7.0

5.0

3.0

0.5

VCE = 10 V

TA = 25°C

0.8

4.0

8.0

TA = 25°C

Cob

Cib

Figure 9. Safe Operating Area

VCE, COLLECTOR EMITTER VOLTAGE (V)

100

10

1

0.1

0.001

0.01

0.1

1

Thermal Limit

100 mS

10 mS

1 mS

1 S

同様の部品番号 - BC847CDXV6T1

メーカー	部品番号	データシート	部品情報
ON Semiconductor	BC847CDXV6T1	64Kb / 6P	Dual General Purpose Transistors March, 2003 - Rev. 0
	BC847CDXV6T1G	102Kb / 5P	Dual General Purpose Transistors April, 2011 ??Rev. 3
	BC847CDXV6T1G	138Kb / 5P	Dual General Purpose Transistors November, 2011 ??Rev. 4
	BC847CDXV6T1G	138Kb / 5P	Dual General Purpose Transistors November, 2011 ??Rev. 4

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