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STD90N4F3 データシート(PDF) 3 Page - STMicroelectronics |
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STD90N4F3 データシート(HTML) 3 Page - STMicroelectronics |
3 / 16 page STD90N4F3, STI90N4F3, STP90N4F3, STU90N4F3 Electrical ratings Doc ID 14212 Rev 3 3/16 1 Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter Value Unit VDS Drain-source voltage (VGS=0) 40 V VGS Gate-source voltage ± 20 V ID (1) 1. Current limited by package Drain current (continuous) at TC = 25 °C 80 A ID Drain current (continuous) at TC = 100 °C 65 A IDM (2) 2. Pulse width limited by safe operating area Drain current (pulsed) 320 A PTOT Total dissipation at TC = 25 °C 110 W Derating factor 0.73 W/°C dv/dt (3) 3. ISD ≤ 80 A, di/dt ≤ 400A/µs, VDS ≤ V(BR)DSS, Tj ≤ Tjmax Peak diode recovery voltage slope 8 V/ns EAS (4) 4. Starting Tj = 25°C, ID = 40A, VDD = 30V Single pulse avalanche energy 400 mJ Tj Tstg Operating junction temperature Storage temperature -55 to 175 °C Table 3. Thermal resistance Symbol Parameter Value Unit TO-220 I²PAK IPAK DPAK Rthj-case Thermal resistance junction-case max 1.36 °C/W Rthj-a Thermal resistance junction-ambient max 62.5 100 °C/W Rthj-pcb (1) 1. When mounted on 1inch² FR-4 2Oz Cu board Thermal resistance junction-ambient max 50 °C/W Tl Maximum lead temperature for soldering purpose 300 275 °C |
同様の部品番号 - STD90N4F3_09 |
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同様の説明 - STD90N4F3_09 |
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