IRLML6401GPBF datasheet(1/8 Pages) IRF

部品番号	IRLML6401GPBF

部品情報	HEXFETPower MOSFET

Download	8 Pages

Scroll/Zoom	100%

メーカー	IRF [International Rectifier]

ホームページ	http://www.irf.com

Logo

1 / 8 page

Parameter

Typ.

Max.

Units

RθJA

Maximum Junction-to-Ambient

75

100

°C/W

IRLML6401GPbF

HEXFET® Power MOSFET

Thermal Resistance

VDSS = -12V

RDS(on) = 0.05Ω

l Ultra Low On-Resistance

l P-Channel MOSFET

l SOT-23 Footprint

l Low Profile (<1.1mm)

l Available in Tape and Reel

l Fast Switching

l 1.8V Gate Rated

l Lead-Free

l Halogen-Free

07/22/08

www.irf.com

1

Parameter

Max.

Units

VDS

Drain- Source Voltage

-12

V

ID @ TA = 25°C

Continuous Drain Current, VGS @ -4.5V

-4.3

ID @ TA= 70°C

Continuous Drain Current, VGS @ -4.5V

-3.4

A

IDM

Pulsed Drain Current

-34

PD @TA = 25°C

Power Dissipation

1.3

PD @TA = 70°C

Power Dissipation

0.8

Linear Derating Factor

0.01

W/°C

EAS

Single Pulse Avalanche Energy

33

mJ

VGS

Gate-to-Source Voltage

± 8.0

V

TJ, TSTG

Junction and Storage Temperature Range

-55 to + 150

°C

Absolute Maximum Ratings

W

These P-Channel MOSFETs from International Rectifier

utilize advanced processing techniques to achieve extremely

low on-resistance per silicon area. This benefit, combined

with the fast switching speed and ruggedized device design

that HEXFET® power MOSFETs are well known for, provides

the designer with an extremely efficient and reliable device

for use in battery and load management.

A thermally enhanced large pad leadframe has been

incorporated into the standard SOT-23 package to produce

a HEXFET Power MOSFET with the industry's smallest

footprint. This package, dubbed the Micro3

™, is ideal for

applications where printed circuit board space is at a

premium. The low profile (<1.1mm) of the Micro3 allows it

to fit easily into extremely thin application environments

such as portable electronics and PCMCIA cards. The thermal

resistance and power dissipation are the best available.

Description

Micro3

™

6

*

'

PD - 96160

同様の部品番号 - IRLML6401GPBF

メーカー	部品番号	データシート	部品情報
International Rectifier	IRLML6401GTRPBF	201Kb / 8P	Ultra Low On-Resistance
VBsemi Electronics Co.,...	IRLML6401GTRPBF	1Mb / 9P	P-Channel 20-V (D-S) MOSFET

More results

IRLML6401GPBF データシート(PDF) 1 Page - International Rectifier

IRLML6401GPBF データシート(HTML) 1 Page - International Rectifier

同様の部品番号 - IRLML6401GPBF

Html Pages

1 2 3 4 5 6 7 8

データシートダウンロード

リンク URL

IRLML6401GPBF データシート(PDF) 1 Page - International Rectifier

IRLML6401GPBF データシート(HTML) 1 Page - International Rectifier

同様の部品番号 - IRLML6401GPBF

Html Pages

1 2 3 4 5 6 7 8

データシート ダウンロード

リンク URL

データシートダウンロード