データシートサーチシステム |
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BC817U データシート(PDF) 1 Page - Infineon Technologies AG |
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BC817U データシート(HTML) 1 Page - Infineon Technologies AG |
1 / 7 page 2007-04-20 1 BC817U 5 4 6 3 2 1 NPN Silicon AF Transistor Array • For AF stages and driver applications • High current gain • Low collector-saturation voltage • Two (galvanic) internal isolated transistors with good matching in one package • Pb-free (RoHS compliant) package1) • Qualified according AEC Q101 EHA07178 6 54 3 2 1 C1 B2 E2 C2 B1 E1 TR1 TR2 Type Marking Pin Configuration Package BC817U 6Bs 1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SC74 Maximum Ratings Parameter Symbol Value Unit Collector-emitter voltage VCEO 45 V Collector-base voltage VCBO 50 Emitter-base voltage VEBO 5 Collector current IC 500 mA Peak collector current ICM 1000 Base current IB 100 Peak base current IBM 200 Total power dissipation- TS ≤ 115 °C Ptot 330 mW Junction temperature Tj 150 °C Storage temperature Tstg -65 ... 150 1Pb-containing package may be available upon special request |
同様の部品番号 - BC817U_07 |
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同様の説明 - BC817U_07 |
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