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FP10R12W1T4 データシート(PDF) 3 Page - Infineon Technologies AG |
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FP10R12W1T4 データシート(HTML) 3 Page - Infineon Technologies AG |
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3 / 12 page  3 Technische Information / technical information FP10R12W1T4 IGBT-Module IGBT-modules prepared by: DK approved by: MB date of publication: 2009-10-30 revision: 2.1 Vorläufige Daten preliminary data Diode-Wechselrichter / diode-inverter Höchstzulässige Werte / maximum rated values Periodische Spitzensperrspannung repetitive peak reverse voltage TÝÎ = 25°C Vçç¢ 1200 V Dauergleichstrom DC forward current IŒ 10 A Periodischer Spitzenstrom repetitive peak forward current t« = 1 ms IŒç¢ 20 A Grenzlastintegral I²t - value Vç = 0 V, t« = 10 ms, TÝÎ = 125°C Vç = 0 V, t« = 10 ms, TÝÎ = 150°C I²t 16,0 14,0 A²s A²s Charakteristische Werte / characteristic values min. typ. max. Durchlassspannung forward voltage IŒ = 10 A, V•Š = 0 V IŒ = 10 A, V•Š = 0 V IŒ = 10 A, V•Š = 0 V VŒ 1,75 1,75 1,75 2,25 V V V TÝÎ = 25°C TÝÎ = 125°C TÝÎ = 150°C Rückstromspitze peak reverse recovery current IŒ = 10 A, - diŒ/dt = 500 A/ s (TÝÎ=150°C) Vç = 600 V V•Š = -15 V Iç¢ 12,0 10,0 8,00 A A A TÝÎ = 25°C TÝÎ = 125°C TÝÎ = 150°C Sperrverzögerungsladung recovered charge IŒ = 10 A, - diŒ/dt = 500 A/ s (TÝÎ=150°C) Vç = 600 V V•Š = -15 V QØ 0,90 1,70 1,90 C C C TÝÎ = 25°C TÝÎ = 125°C TÝÎ = 150°C Abschaltenergie pro Puls reverse recovery energy IŒ = 10 A, - diŒ/dt = 500 A/ s (TÝÎ=150°C) Vç = 600 V V•Š = -15 V EØþÊ 0,24 0,52 0,59 mJ mJ mJ TÝÎ = 25°C TÝÎ = 125°C TÝÎ = 150°C Innerer Wärmewiderstand thermal resistance, junction to case pro Diode / per diode RÚÌœ† 1,75 1,90 K/W Übergangs-Wärmewiderstand thermal resistance, case to heatsink pro Diode / per diode ð«ÈÙÚþ = 1 W/(m·K) / ðÃØþÈÙþ = 1 W/(m·K) RÚ̆™ 1,30 K/W Diode-Gleichrichter / diode-rectifier Höchstzulässige Werte / maximum rated values Periodische Rückw. Spitzensperrspannung repetitive peak reverse voltage TÝÎ = 25°C Vçç¢ 1600 V Durchlassstrom Grenzeffektivwert pro Dio. forward current RMS maximum per diode T† = 80°C IŒç¢»¢ 30 A Gleichrichter Ausgang Grenzeffektivstrom maximum RMS current at Rectifier output T† = 80°C I碻¢ 30 A Stoßstrom Grenzwert surge forward current tÔ = 10 ms, TÝÎ = 25°C tÔ = 10 ms, TÝÎ = 150°C IŒ»¢ 300 245 A A Grenzlastintegral I²t - value tÔ = 10 ms, TÝÎ = 25°C tÔ = 10 ms, TÝÎ = 150°C I²t 450 300 A²s A²s Charakteristische Werte / characteristic values min. typ. max. Durchlassspannung forward voltage TÝÎ = 150°C, IŒ = 10 A VŒ 0,80 V Sperrstrom reverse current TÝÎ = 150°C, Vç = 1600 V Iç 1,00 mA Innerer Wärmewiderstand thermal resistance, junction to case pro Diode per diode RÚÌœ† 1,20 1,35 K/W Übergangs-Wärmewiderstand thermal resistance, case to heatsink pro Diode / per diode ð«ÈÙÚþ = 1 W/(m·K) / ðÃØþÈÙþ = 1 W/(m·K) RÚ̆™ 1,15 K/W |
同様の部品番号 - FP10R12W1T4 |
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