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SPI08N80C3 データシート(PDF) 1 Page - Infineon Technologies AG

部品番号 SPI08N80C3
部品情報  CoolMOSTM Power Transistor Features New revolutionary high voltage technology
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メーカー  INFINEON [Infineon Technologies AG]
ホームページ  http://www.infineon.com
Logo INFINEON - Infineon Technologies AG

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SPI08N80C3
CoolMOS
TM Power Transistor
Features
• New revolutionary high voltage technology
• Extreme dv/dt rated
• High peak current capability
• Qualified according to JEDEC
1) for target applications
• Pb-free lead plating; RoHS compliant
• Ultra low gate charge
• Ultra low effective capacitances
CoolMOS
TM 800V designed for:
• Industrial application with high DC bulk voltage
• Switching Application ( i.e. active clamp forward )
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Unit
Continuous drain current
I D
T C=25 °C
A
T C=100 °C
Pulsed drain current
2)
I D,pulse
T C=25 °C
Avalanche energy, single pulse
E AS
I D=1.6 A, V DD=50 V
340
mJ
Avalanche energy, repetitive t AR
2),3)
E AR
I D=8 A, V DD=50 V
Avalanche current, repetitive t AR
2),3)
I AR
A
MOSFET dv /dt ruggedness
dv /dt
V DS=0…640 V
V/ns
Gate source voltage
V GS
static
V
AC (f >1 Hz)
Power dissipation
P tot
T C=25 °C
W
Operating and storage temperature
T j, T stg
°C
Value
8
5.1
24
±30
104
-55 ... 150
0.2
8
50
±20
V DS
800
V
R DS(on)max @ Tj = 25°C
0.65
Q g,typ
45
nC
Product Summary
Type
Package
Marking
SPI08N80C3
PG-TO262-3
08N80C3
PG-TO262-3
Rev. 2.9
page 1
2008-10-15


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