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SPI08N80C3 データシート(PDF) 1 Page - Infineon Technologies AG |
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SPI08N80C3 データシート(HTML) 1 Page - Infineon Technologies AG |
1 / 10 page SPI08N80C3 CoolMOS TM Power Transistor Features • New revolutionary high voltage technology • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC 1) for target applications • Pb-free lead plating; RoHS compliant • Ultra low gate charge • Ultra low effective capacitances CoolMOS TM 800V designed for: • Industrial application with high DC bulk voltage • Switching Application ( i.e. active clamp forward ) Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Unit Continuous drain current I D T C=25 °C A T C=100 °C Pulsed drain current 2) I D,pulse T C=25 °C Avalanche energy, single pulse E AS I D=1.6 A, V DD=50 V 340 mJ Avalanche energy, repetitive t AR 2),3) E AR I D=8 A, V DD=50 V Avalanche current, repetitive t AR 2),3) I AR A MOSFET dv /dt ruggedness dv /dt V DS=0…640 V V/ns Gate source voltage V GS static V AC (f >1 Hz) Power dissipation P tot T C=25 °C W Operating and storage temperature T j, T stg °C Value 8 5.1 24 ±30 104 -55 ... 150 0.2 8 50 ±20 V DS 800 V R DS(on)max @ Tj = 25°C 0.65 Ω Q g,typ 45 nC Product Summary Type Package Marking SPI08N80C3 PG-TO262-3 08N80C3 PG-TO262-3 Rev. 2.9 page 1 2008-10-15 |
同様の部品番号 - SPI08N80C3 |
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同様の説明 - SPI08N80C3 |
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