52098HA (KT)/2190MO, TS No.3287-1/2

SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

PNP Epitaxial Planar Silicon Composite Transistor

Switching Applications

(with Bias Resistance)

Ordering number:EN3287

FC133

Specifications

Absolute Maximum Ratings at Ta = 25˚C

C1:Collector 1

C2:Collector 2

B2:Base 2

EC:Emitter Common

B1:Base 1

SANYO:CP5

Package Dimensions

unit:mm

2066

[FC133]

Features

· On-chip bias resistances (R1=10k

Ω, R2=47kΩ)).

· Composite type with 2 transistors contained in the

CP package currently in use, improving the mount-

ing efficiency greatly.

· The FC133 is formed with two chips, being equiva-

lent to the 2SA1563, placed in one package.

· Excellent in thermal equilibrium and pair capability.

Electrical Connection

˚C

˚C

Electrical Characteristics at Ta = 25˚C

Note:The specifications shown above are for each individual transistor.

Marking:133

r

e

t

e

m

a

r

a

Pl

o

b

m

y

Ss

n

o

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t

i

d

n

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Cs

g

n

i

t

a

Rt

i

n

U

e

g

a

t

l

o

V

e

s

a

B

-

o

t

-

r

o

t

c

e

ll

o

CV

O

B

C

0

5

–V

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g

a

t

l

o

V

r

e

t

t

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m

E

-

o

t

-

r

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t

c

e

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o

CV

O

E

C

0

5

–V

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g

a

t

l

o

V

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s

a

B

-

o

t

-

r

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t

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m

EV

O

B

E

6

–V

t

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r

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C

r

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ll

o

CIC

0

0

1

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m

t

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r

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u

C

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ll

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C

k

a

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PI P

C

0

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2

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D

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CPC

t

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1

0

0

2W

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TPT

0

0

3W

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T

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1

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T

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5

1

+

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5

5

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Pl

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CI

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B

C

V B

C

I

,

V

0

4

–

=

E 0

=1

.

0

–A

µ

t

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r

r

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C

f

f

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C

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C

V B

C

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V

0

4

–

=

B 0

=5

.

0

–A

µ

t

n

e

r

r

u

C

f

f

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t

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C

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m

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O

B

E

V B

E

I

,

V

5

–

=

C 0

=7

6

–8

8

–5

2

1

–A

µ

n

i

a

G

t

n

e

r

r

u

C

C

Dh E

F

V E

C

I

,

V

5

–

=

C

A

m

5

–

=0

7

t

c

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d

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r

P

h

t

d

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w

d

n

a

B

-

n

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GfT

V E

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1

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5

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=0

0

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c

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C

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CV B

C

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1

=

f

,

V

0

1

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=1

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5F

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CV

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t

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(

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C

IC

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,

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m

0

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=

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5

.

0

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.

0

–3

.

0

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g

a

t

l

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V

n

w

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d

k

a

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r

B

B

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CV

O

B

C

)

R

B

(

IC

I

,

A

µ

0

1

–

=

E 0

=0

5

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a

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w

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)

R

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IC

R

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µ

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=

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B =∞

0

5

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F

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IV

)

f

f

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I

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C

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5

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=

C

A

µ

0

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1

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=5

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0

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.

0

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.

0

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a

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N

O

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IV

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n

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(

I

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C

I

,

V

2

.

0

–

=

C

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m

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–

=7

.

0

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.

1

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.

2

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c

n

a

t

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R

t

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I1

R7

0

13

1k

Ω

o

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t

a

R

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n

c

a

t

s

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s

e

R2

R

/

1

R3

9

1

.

03

1

2

.

04

3

2

.

0

C1:Collector 1

C2:Collector 2

B2:Base 2

EC:Emitter Common

B1:Base 1