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2SC2334 データシート(PDF) 3 Page - Renesas Technology Corp

部品番号 2SC2334
部品情報  SILICON POWER TRANSISTOR
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メーカー  RENESAS [Renesas Technology Corp]
ホームページ  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

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The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D14902EJ2V1DS00 (2nd edition)
Date Published August 2004 NS CP(K)
Printed in Japan
SILICON POWER TRANSISTOR
2SC2334
NPN SILICON EPITAXIAL TRANSISTOR
FOR HIGH-SPEED SWITCHING
DATA SHEET
2002
The 2SC2334 is a mold power transistor developed for high-speed
switching, and is ideal for use as a driver in devices such as switching
regulators, DC/DC converters, and high-frequency power amplifiers.
FEATURES
• Low collector saturation voltage
• Fast switching speed
• Complementary transistor: 2SA1010
ABSOLUTE MAXIMUM RATINGS (TA = 25
°C)
Parameter
Symbol
Conditions
Ratings
Unit
Collector to base voltage
VCBO
150
V
Collector to emitter voltage
VCEO
100
V
Emitter to base voltage
VEBO
7.0
V
Collector current (DC)
IC(DC)
7.0
A
Collector current (pulse)
IC(pulse)
PW
≤ 300
µs,
duty cycle
≤ 10%
15
A
Base current (DC)
IB(DC)
3.5
A
TC = 25
°C
40
W
Total power dissipation
PT
TA = 25
°C
1.5
W
Junction temperature
Tj
150
°C
Storage temperature
Tstg
−55 to +150
°C
ORDERING INFORMATION
Part No.
Package
2SC2334
TO-220AB
(TO-220AB)


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