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1N3657 データシート(PDF) 1 Page - EIC discrete Semiconductors |
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1N3657 データシート(HTML) 1 Page - EIC discrete Semiconductors |
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1 / 1 page 1N3611 - 1N3614 GLASS PASSIVATED JUNCTION 1N3657 SILICON RECTIFIERS PRV : 200 - 1000 Volts Io : 1.0 Ampere FEATURES : * Glass passivated chip * High forward surge current capability * High reliability * Low reverse current * Low forward voltage drop * Pb / RoHS Free MECHANICAL DATA : * Case : M1A Molded plastic * Epoxy : UL94V-O rate flame retardant * Lead : Axial lead solderable per MIL-STD-202, Method 208 guaranteed * Polarity : Color band denotes cathode end * Mounting position : Any * Weight : 0.20 gram (approximately) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Rating at 25 °C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20%. SYMBOL 1N3611 1N3612 1N3613 1N3614 1N3657 UNIT Maximum Working Peak Reverse Voltage VRWM 200 400 600 800 1000 V Minimum Breakdown Voltage @ 100 μA VBR(MIN) 240 480 720 920 1150 V Maximum Average Forward Current at Ta = 100 °C 1.0 at Ta = 150 °C 0.3 Peak Forward Surge Current (8.3 ms half-sine) IFSM A Maximum Forward Voltage at IF = 1.0 A VF 1.1 V Maximum Reverse Current at VRWM, Ta = 25 °C IR 1.0 at VRWM, Ta = 150 °C IR(H) 300 Thermal Resistance , Junction to Lead (Note 1) RӨJL 38 °C/W Operating Junction and Storage Temperature Range TJ, TSTG -65 to +175 °C Note : (1) At 3/8"(10 mm) lead length form body. Page 1 of 1 Rev. 03 : November 2, 2006 μA RATING 30 IF(AV) A M1A Dimensions in inches and ( millimeters ) 1.00 (25.4) MIN. 0.085(2.16) 0.075(1.91) 0.138(3.51) 0.122(3.10) 1.00 (25.4) MIN. 0.024(0.60) 0.022(0.55) Certificate TH97/10561QM Certificate TW00/17276EM |
同様の部品番号 - 1N3657 |
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同様の説明 - 1N3657 |
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