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IRLML6302GPBF データシート(PDF) 2 Page - International Rectifier |
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IRLML6302GPBF データシート(HTML) 2 Page - International Rectifier |
2 / 8 page IRLML6302GPbF www.irf.com 2 Parameter Min. Typ. Max. Units Conditions V(BR)DSS Drain-to-Source Breakdown Voltage -20 V VGS = 0V, ID = -250µA ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient -4.9 mV/°C Reference to 25°C, ID = -1mA 0.60 VGS = -4.5V, ID = -0.61A 0.90 VGS = -2.7V, ID = -0.31A VGS(th) Gate Threshold Voltage -0.70 -1.5 V VDS = VGS, ID = -250µA gfs Forward Transconductance 0.56 S VDS = -10V, ID = -0.31A -1.0 VDS = -16V, VGS = 0V -25 VDS = -16V, VGS = 0V, TJ = 125°C Gate-to-Source Forward Leakage -100 VGS = -12V Gate-to-Source Reverse Leakage 100 VGS = 12V Qg Total Gate Charge 2.4 3.6 ID = -0.61A Qgs Gate-to-Source Charge 0.56 0.84 nC VDS = -16V Qgd Gate-to-Drain ("Miller") Charge 1.0 1.5 VGS = -4.5V, See Fig. 6 and 9 td(on) Turn-On Delay Time 13 VDD = -10V tr Rise Time 18 ID = -0.61A td(off) Turn-Off Delay Time 22 RG = 6.2Ω tf Fall Time 22 RD = 16Ω, See Fig. 10 Ciss Input Capacitance 97 VGS = 0V Coss Output Capacitance 53 pF VDS = -15V Crss Reverse Transfer Capacitance 28 = 1.0MHz, See Fig. 5 Ω µA nA IGSS IDSS Drain-to-Source Leakage Current RDS(ON) Static Drain-to-Source On-Resistance Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Notes: Repetitive rating; pulse width limited by max. junction temperature. ( See fig. 11 ) ISD ≤ -0.61A, di/dt ≤ 76A/µs, VDD≤V(BR)DSS, TJ ≤ 150°C Pulse width ≤ 300µs; duty cycle ≤ 2%. Surface mounted on FR-4 board, t ≤ 5sec. Parameter Min. Typ. Max. Units Conditions IS Continuous Source Current MOSFET symbol (Body Diode) showing the ISM Pulsed Source Current integral reverse (Body Diode) p-n junction diode. VSD Diode Forward Voltage ––– ––– -1.2 V TJ = 25°C, IS = -0.61A, VGS = 0V trr Reverse Recovery Time ––– 35 53 ns TJ = 25°C, IF = -0.61A Qrr Reverse Recovery Charge ––– 26 39 nC di/dt = -100A/µs Source-Drain Ratings and Characteristics A S D G -4.9 -0.54 ns |
同様の部品番号 - IRLML6302GPBF |
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同様の説明 - IRLML6302GPBF |
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