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STB45NF06 データシート(PDF) 4 Page - STMicroelectronics

部品番号 STB45NF06
部品情報  N-channel 60 V, 0.023 廓, 38 A TO-220, D2PAK STripFETTM II Power MOSFET
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メーカー  STMICROELECTRONICS [STMicroelectronics]
ホームページ  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STB45NF06 データシート(HTML) 4 Page - STMicroelectronics

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Electrical characteristics
STB45NF06, STP45NF06
4/15
Doc ID 7433 Rev 5
2
Electrical characteristics
(TCASE=25°C unless otherwise specified).
Table 5.
On/off states
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
V(BR)DSS
Drain-source breakdown
voltage
ID = 250µA, VGS= 0
60
V
IDSS
Zero gate voltage drain
current (VGS = 0)
VDS = Max rating,
VDS = Max rating @125°C
1
10
µA
µA
IGSS
Gate body leakage current
(VDS = 0)
VGS = ±20V
±
100
nA
VGS(th)
Gate threshold voltage
VDS= VGS, ID = 250µA
23
4
V
RDS(on)
Static drain-source on
resistance
VGS= 10V, ID= 19A
0.023
0.028
Table 6.
Dynamic
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
gfs
(1)
1.
Pulsed: pulse duration=300µs, duty cycle 1.5%
Forward transconductance
VDS > ID(on) x RDS(on)max,
ID =19 A
-18
S
Ciss
Coss
Crss
Input capacitance
Output capacitance
Reverse transfer
capacitance
VDS =25V , f=1 MHz,
VGS=0
-
920
225
80
pF
pF
pF
Qg
Qgs
Qgd
Total gate charge
Gate-source charge
Gate-drain charge
VDD = 48 V, ID = 34 A
VGS = 10V
-
32
6.5
14.5
58
nC
nC
nC
Table 7.
Switching times
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
td(on)
tr
Turn-on delay time
rise time
VDD=30 V, ID=17 A,
RG=4.7 Ω, VGS= 10 V
(see Figure 13)
12
50
ns
ns
td(off)
tf
Turn-off delay time
fall time
VDD=30V, ID=17 A,
RG=4.7 Ω, VGS=10 V
(see Figure 13)
30
10
ns
ns


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