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STPS10L45C データシート(PDF) 3 Page - STMicroelectronics |
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STPS10L45C データシート(HTML) 3 Page - STMicroelectronics |
3 / 10 page STPS10L45C Characteristics 3/10 Figure 1. Average forward power dissipation versus average forward current (per diode) Figure 2. Average forward current versus ambient temperature ( δ = 0.5, per diode) 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 P (W) F(AV) T δ=tp/T tp I (A) F(AV) δ = 0.05 δ = 0.1 δ = 0.2 δ = 0.5 δ = 1 0 25 50 75 100 125 150 0 1 2 3 4 5 6 I (A) F(AV) TO-220FPAB TO-220AB / D PAK / I 22PAK R=R th(j-a) th(j-c) T (°C) amb T δ=tp/T tp R =15°C/W th(j-a) Figure 3. Normalized avalanche power derating versus pulse duration Figure 4. Normalized avalanche power derating versus junction temperature 0.001 0.01 0.1 0.01 1 0.1 10 100 1000 1 t (µs) p P(t ) P (1µs) ARM p ARM 0 0.2 0.4 0.6 0.8 1 1.2 25 50 75 100 125 150 T (°C) j P(t ) P (25°C) ARM p ARM Figure 5. Non repetitive surge peak forward current versus overload duration (maximum values, per diode) (TO-220AB, I2PAK and D2PAK) Figure 6. Non repetitive surge peak forward current versus overload duration (maximum values, per diode) ( TO-220FPAB) 1E-3 1E-2 1E-1 1E+0 0 10 20 30 40 50 60 70 80 90 100 I (A) M IM t δ=0.5 t(s) T =25°C C T =75°C C T =125°C C 1E-3 1E-2 1E-1 1E+0 0 10 20 30 40 50 60 70 80 I (A) M IM t δ=0.5 t(s) T =25°C C T =75°C C T =125°C C |
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同様の説明 - STPS10L45C |
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