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STPS41L60C データシート(PDF) 2 Page - STMicroelectronics |
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STPS41L60C データシート(HTML) 2 Page - STMicroelectronics |
2 / 8 page Characteristics STPS41L60C 2/8 1 Characteristics When the diodes 1 and 2 are used simultaneously : ΔTj(diode 1) = P(diode1) x R th(j-c)(Per diode) + P(diode 2) x Rth(c) To evaluate the conduction losses use the following equation: P = 0.42 x IF(AV) + 0.007 x IF 2 (RMS) Table 2. Thermal resistances Symbol Parameter Value Unit Rth (j-c) Junction to case Per diode Total 1.5 0.8 ° C/W Rth (c) Coupling 0.1 Table 3. Static electrical characteristics (per diode) Symbol Parameter Tests Conditions Min. Typ. Max. Unit IR (1) Reverse leakage current Tj = 25° C VR = VRRM 600 µA Tj = 125° C 100 175 mA VF (1) Forward voltage drop Tj = 25° C IF = 20 A 0.60 V Tj = 125° C IF = 20 A 0.50 0.58 Tj = 25° C IF = 40A 0.77 Tj = 125° C IF = 40A 0.67 0.71 1. Pulse test: tp = 380 µs, δ < 2% Figure 1. Conduction losses versus average current Figure 2. Average forward current versus ambient temperature ( δ = 0.5) P (W) F(av) 0 2 4 6 8 10 12 14 16 0 5 10 15 20 25 δ=0.05 δ=0.1 δ=0.2 δ=0.5 δ=1 T δ=tp/T tp I (A) F(av) I (A) F(av) 0 2 4 6 8 10 12 14 16 18 20 22 0 25 50 75 100 125 150 R th(j-a)=Rth(j-c) R th(j-a)=50 °C/W T δ=tp/T tp T (°C) amb |
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同様の説明 - STPS41L60C |
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