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データシートサーチシステム |
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データシートサーチシステム |
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2SA1327A データシート(PDF) 2 Page - Toshiba Semiconductor |
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2SA1327A データシート(HTML) 2 Page - Toshiba Semiconductor |
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2 / 4 page  2SA1327A 2006-11-09 2 Electrical Characteristics (Tc = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Collector cut-off current ICBO VCB = −50 V, IE = 0 ― ― −1.0 μA Emitter cut-off current IEBO VEB = −8 V, IC = 0 ― ― −1.0 μA Collector-emitter breakdown voltage V (BR) CEO IC = −10 mA, IB = 0 −20 ― ― V hFE (1) (Note) VCE = −2 V, IC = −1 A 100 ― 320 DC current gain hFE (2) VCE = −2 V, IC = −8 A 70 140 ― ― Collector-emitter saturation voltage VCE (sat) IC = −8 A, IB = −0.4 A ― −0.3 −0.5 V Base-emitter voltage VBE VCE = −2 V, IC = −8 A ― −0.95 −1.5 V Transition frequency fT VCE = −2 V, IC = −1 A ― 45 ― MHz Collector output capacitance Cob VCB = −10 V, IE = 0, f = 1 MHz ― 400 ― pF Note: hFE (1) classification O: 100 to 200, Y: 160 to 320 Marking Lot No. A line indicates lead (Pb)-free package or lead (Pb)-free finish. A1327A Characteristics indicator Part No. (or abbreviation code) |
同様の部品番号 - 2SA1327A_06 |
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同様の説明 - 2SA1327A_06 |
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