2SA1425

2010-03-10

1

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)

2SA1425

Power Amplifier Applications

Driver-Stage Amplifier Applications

• Complementary to 2SC3665.

Characteristics

Symbol

Rating

Unit

Collector-base voltage

−120

V

Collector-emitter voltage

−120

V

Emitter-base voltage

−5

V

Collector current

−800

mA

Base current

−80

mA

Collector power dissipation

1000

mW

Junction temperature

150

°C

Storage temperature range

−55 to 150

°C

Note1: Using continuously under heavy loads (e.g. the application of high

temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the

reliability significantly even if the operating conditions (i.e.

operating temperature/current/voltage, etc.) are within the

absolute maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

Unit: mm

JEDEC

―

JEITA

―

TOSHIBA

2-7D101A

Weight: 0.2 g (typ.)