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2SA1680 データシート(PDF) 2 Page - Toshiba Semiconductor

部品番号 2SA1680
部品情報  Power Amplifier Applications Power Switching Applications
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メーカー  TOSHIBA [Toshiba Semiconductor]
ホームページ  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

2SA1680 データシート(HTML) 2 Page - Toshiba Semiconductor

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2SA1680
2009-12-21
2
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Collector cut-off current
ICBO
VCB = −60 V, IE = 0
−1.0
μA
Emitter cut-off current
IEBO
VEB = −6 V, IC = 0
−1.0
μA
Collector-emitter breakdown voltage
V (BR) CEO
IC = −10 mA, IB = 0
−50
V
hFE (1)
VCE = −2 V, IC = −100 mA
120
400
DC current gain
hFE (2)
VCE = −2 V, IC = −1.5 A
40
Collector-emitter saturation voltage
VCE (sat)
IC = −1 A, IB = −0.05 A
−0.5
V
Base-emitter saturation voltage
VBE (sat)
IC = −1 A, IB = −0.05 A
−1.2
V
Transition frequency
fT
VCE = −2 V, IC = −100 mA
100
MHz
Collector output capacitance
Cob
VCB = −10 V, IE = 0, f = 1 MHz
23
pF
Turn-on time
ton
0.1
Storage time
tstg
0.3
Switching time
Fall time
tf
IB1 =0.05 A,IB2 = 0.05 A
duty cycle ≤ 1%
0.1
μs
Marking
Note2: A line under a Lot No. identifies the indication of product Labels.
Not underlined: [[Pb]]/INCLUDES > MCV
Underlined: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]
Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS
compatibility of Product. The RoHS is the Directive 2002/95/EC of the European Parliament and of the Council of 27
January 2003 on the restriction of the use of certain hazardous substances in electrical and electronic equipment.
20 μs
VCC = −30 V
Output
IB1
IB2
Input
A1680
Lot No.
Note2
Part No. (or abbreviation code)


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