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2SA1892 データシート(PDF) 1 Page - Toshiba Semiconductor

部品番号 2SA1892
部品情報  Power Amplifier Applications Power Switching Applications
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メーカー  TOSHIBA [Toshiba Semiconductor]
ホームページ  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

2SA1892 データシート(HTML) 1 Page - Toshiba Semiconductor

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2SA1892
2006-11-09
1
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)
2SA1892
Power Amplifier Applications
Power Switching Applications
• Low collector-emitter saturation voltage: VCE (sat) = −0.5 V (max)
(IC = −1 A, IB = −0.05 A)
• High collector power dissipation: PC = 1.3 W
• High-speed switching time: tstg = 1.0 μs (typ.)
• Complementary to 2SC5029
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
−50
V
Collector-emitter voltage
VCEO
−50
V
Emitter-base voltage
VEBO
−5
V
Collector current
IC
−3
A
Base current
IB
−0.2
A
Collector power dissipation
PC
1.3
W
Junction temperature
Tj
150
°C
Storage temperature range
Tstg
−55 to 150
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature, etc.) may cause this product to
decrease in the reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
Unit: mm
JEDEC
JEITA
TOSHIBA
2-8M1A
Weight: 0.55 g (typ.)


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