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2SC3515 データシート(PDF) 1 Page - Toshiba Semiconductor |
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2SC3515 データシート(HTML) 1 Page - Toshiba Semiconductor |
1 / 6 page 2SC3515 2004-07-07 1 TOSHIBA Transistor Silicon NPN Triple Diffused Type (PCT process) 2SC3515 HIGH Voltage Control Applications Plasma Display, Nixie Tube Driver Applications Cathode Ray Tube Brightness Control Applications • High voltage: VCBO = 300 V, VCEO = 300 V • Low saturation voltage: VCE (sat) = 0.5 V (max) • Small collector output capacitance: Cob = 3 pF (typ.) • Complementary to 2SA1384 • Small flat package • PC = 1.0 to 2.0 W (mounted on a ceramic substrate) Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 300 V Collector-emitter voltage VCEO 300 V Emitter-base voltage VEBO 6 V Collector current IC 100 mA Base current IB 20 mA PC 500 Collector power dissipation PC (Note 1) 1000 mW Junction temperature Tj 150 °C Storage temperature range Tstg −55 to 150 °C Note 1: Mounted on a ceramic substrate (250 mm 2 × 0.8 mmt) Unit: mm PW-MINI JEDEC ― JEITA SC-62 TOSHIBA 2-5K1A Weight: 0.05 g (typ.) |
同様の部品番号 - 2SC3515_04 |
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同様の説明 - 2SC3515_04 |
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