BC856B datasheet(3/4 Pages) DIODES

部品番号	BC856B

部品情報	PNP SURFACE MOUNT SMALL SIGNAL TRANSISTOR

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メーカー	DIODES [Diodes Incorporated]

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1

0.1

10

100

1000

I , COLLECTOR CURRENT (mA)

Fig. 2 Collector Emitter Saturation Voltage

vs. Collector Current

C

T= 25°C

A

T= -50°C

A

T = 150°C

A

0

0.1

0.2

0.3

0.4

0.5

I

C

B

= 10

0

50

100

25

50

75

100

125

150

175

200

T , AMBIENT TEMPERATURE (°C)

Fig. 1, Max Power Dissipation vs

Ambient Temperature

A

150

200

250

300

350

0

0.1

0.2

0.3

0.4

0.5

0.1

1.0

10

100

I , COLLECTOR CURRENT (mA)

Fig. 3, DC Current Gain vs. Collector Current

C

10

100

1000

1

10

100

I , COLLECTOR CURRENT (mA)

Fig. 4, Gain Bandwidth Product vs Collector Current

C

V= 5V

CE

DS11207 Rev. 19 - 2

3 of 4

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BC856A-BC858C

同様の部品番号 - BC856B

メーカー	部品番号	データシート	部品情報
NXP Semiconductors	BC856B	47Kb / 8P	PNP general purpose transistors 1999 Apr 12
Yea Shin Technology Co....	BC856B	922Kb / 7P	General Purpose Transistors
Taiwan Semiconductor Co...	BC856B	88Kb / 3P	0.2 Watts PNP Plastic-Encapsulate Transistors
FutureWafer Tech Co.,Lt...	BC856B	1Mb / 12P	PNP Silicon Epitaxial General Purpose Transistors
SeCoS Halbleitertechnol...	BC856B	263Kb / 3P	BC856A

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同様の説明 - BC856B

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