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LMN200B02-7 データシート(PDF) 4 Page - Diodes Incorporated

部品番号 LMN200B02-7
部品情報  200 mA LOAD SWITCH FEATURING PRE-BIASED PNP TRANSISTOR AND N-MOSFET
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メーカー  DIODES [Diodes Incorporated]
ホームページ  http://www.diodes.com
Logo DIODES - Diodes Incorporated

LMN200B02-7 データシート(HTML) 4 Page - Diodes Incorporated

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DS30658 Rev. 7 - 2
4 of 9
www.diodes.com
LMN200B02
© Diodes Incorporated
Electrical Characteristics:
N-MOSFET with Gate Pull-Down Resistor (Q2)
@TA = 25°C unless otherwise specified
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 4)
Drain-Source Breakdown Voltage, BVDSS
V(BR)DSS
60
⎯
⎯
V
VGS = 0V, ID = 10μA
Zero Gate Voltage Drain Current (Drain Leakage
Current)
IDSS
⎯
⎯
1
μA
VGS =0V, VDS = 60V
Gate-Body Leakage Current, Forward
IGSSF
⎯
⎯
0.95
mA
VGS = 20V, VDS = 0V
Gate-Body Leakage Current, Reverse
IGSSR
⎯
⎯
-0.95
mA
VGS = -20V, VDS = 0V
ON CHARACTERISTICS (Note 4)
Gate Source Threshold Voltage (Control Supply
Voltage)
VGS(th)
1
1.9
2.2
V
VDS = VGS, ID = 0.25mA
Static Drain-Source On-State Voltage
VDS(on)
⎯
0.10
1.5
V
VGS = 5V, ID = 50mA
⎯
0.15
3.75
VGS = 10V, ID = 115mA
On-State Drain Current
ID(on)
500
⎯
⎯
mA
VGS = 10V,
VDS ≥2XVDS(ON)
Static Drain-Source On-Resistance
RDS(on)
⎯
1.6
3
Ω
VGS = 5V, ID = 50mA
⎯
1.4
2
VGS = 10V, ID = 500mA
Forward Transconductance
gFS
80
240
⎯
mS
VDS ≥2XVDS(ON), ID = 115 mA
80
350
⎯
VDS ≥2XVDS(ON), ID = 200 mA
Gate Pull-Down Resistor, +/- 30%
R3
⎯
37
⎯
K
Ω
⎯
DYNAMIC CHARACTERISTICS
Input Capacitance
Ciss
⎯
⎯
50
pF
VDS = -25V, VGS = 0V,
f = 1MHz
Output Capacitance
Coss
⎯
⎯
25
pF
Reverse Transfer Capacitance
Crss
⎯
⎯
5
pF
SWITCHING CHARACTERISTICS
Turn-On Delay Time
tD(on)
⎯
⎯
20
ns
VDD = 30V, VGS =10V,
ID = 200mA,
RG = 25 Ohm, RL = 150 Ohm
Turn-Off Delay Time
tD(off)
⎯
⎯
40
ns
SOURCE-DRAIN (BODY) DIODE CHARACTERISTICS AND MAXIMUM RATINGS
Drain-Source Diode Forward On-Voltage
VSD
⎯
0.90
1.5
V
VGS = 0V, IS = 115 mA
Maximum Continuous Drain-Source Diode Forward
Current (Reverse Drain Current)
IS
⎯
⎯
115
mA
⎯
Maximum Pulsed Drain-Source Diode Forward
Current
ISM
⎯
⎯
800
mA
⎯
Notes:
4. Short duration pulse test used to minimize self-heating effect.
Typical Characteristics
0
50
25
50
75
100
125
150
175
T , AMBIENT TEMPERATURE (°C)
Fig. 3 Max Power Dissipation vs.
Ambient Temperature (Total Device)
A
100
150
200
0
(Note 3)
250
300
350


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