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GS2008HE データシート(PDF) 1 Page - Pan Jit International Inc. |
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GS2008HE データシート(HTML) 1 Page - Pan Jit International Inc. |
1 / 3 page PAGE . 1 REV.0.0-DEC.17.2009 FEATURES • For surface mounted applications • Low profile package • Easy pick and place • Low Forward Drop • Glass Passivated Chip Junction • In compliance with EU RoHS 2002/95/EC directives MECHANICAL DATA • Case: SOD-123HE molded plastic • Terminals: Solder plated, solderable per MIL-STD-750,Method 2026 • Polarity: Indicated by cathode band SURFACE MOUNT RECTIFIER NOTES:1. Measured at 1 MHz and applied Vr = 4.0 volts. 2. 8.0 mm2 ( .013mm thick ) land areas. VOLTAGE 800 Volts 1.0 Amperes CURRENT Unit:inch(mm) 0.114(2.90) 0.106(2.70) 0.040(1.00) 0.031(0.80) 0.154(3.90) 0.137(3.50) 0.091(2.30) 0.074(1.90) 0.048(1.20) 0.031(0.80) 1 2 Cathode Anode MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25°C ambient temperature unless otherwise specified. Single phase,half wave,60Hz,resistive or inductive load. For capacitive load,derate current by 20% P ARAM E T E R SYM BO L G S2 0 0 8 HE U N ITS M a xi m um R e cur r e nt P e ak Re ve r s e V o l t ag e V RR M 80 0 V Ma xi m um R M S V o lt a g e V RMS 56 0 V Ma xi m um D C B l o c k i ng V o l t a g e V DC 80 0 V M a xi m um A ve r ag e Fo r w a r d C ur r ent h at T L = 1 00 O C I F( A V ) 2. 0 A P e ak Fo r w a r d S ur g e C ur r ent : 8. 3 m s s i ng l e ha l f s i ne - wave s upe r i m po s ed o n r a t e d l o ad ( J E D E C m e t h o d ) I FS M 50 A M axi m um F or w ar d V o lt age a t 1. 0 A V F 1. 1 V M axi m um D C Re ver s e C u r r ent at T J =2 5 O C R a t e d D C B l ocki ng Vo l t ag e T J =1 2 5 O C I R 1. 0 50 μ A Typi c a l J unc t i on c ap ac i t anc e ( N o t e 1) C J 12 p F Typi c a l J unc t i on R e si s t a nce ( N ot e 2 ) R θ JL 10 0 O C / W O p er at i ng a nd S t or age Tem pe r a t ur e R ang e T J ,T ST G - 5 5 t o + 1 50 O C |
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同様の説明 - GS2008HE |
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