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LC35W1000BTS-10U データシート(PDF) 3 Page - Sanyo Semicon Device

部品番号 LC35W1000BTS-10U
部品情報  Asynchronous Silicon Gate 1M (131,072 words x 8 bits) SRAM
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メーカー  SANYO [Sanyo Semicon Device]
ホームページ  https://www.sanyo-av.com/us/
Logo SANYO - Sanyo Semicon Device

LC35W1000BTS-10U データシート(HTML) 3 Page - Sanyo Semicon Device

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Block Diagram
No. 6624-3/9
LC35W1000BM, BTS-70U/10U
Control
circuit
Data control circuit
Output
buffer
Input
data
buffer
Memory cell array
Pin Functions
A0 to A16
Address input
WE
Ready/write control input
OE
Output enable input
CE, CE2
Chip enable input
I/O1 to I/O8
Data I/O
VCC, GND
Power supply, ground
Function Table
Note: X indicates H or L.
*: For pulse widths under 30 ns: –2.0 V
Note: This chip may be destroyed if any stress in excess of the absolute maximum ratings is applied.
Mode
CE1
CE2
OE
WE
I/O
Supply current
Ready cycle
L
H
L
H
Data output
ICCA
Write cycle
L
H
X
L
Data input
ICCA
Output disable
L
H
H
H
High impedance
ICCA
Unselected
H
X
X
X
High impedance
ICCS
X
L
X
X
High impedance
ICCS
Parameter
Symbol
Conditions
Ratings
Unit
Maximum supply voltage
VCC max
4.6
V
Input pin voltage
VIN
–0.3* to VCC + 0.3
V
I/O pin voltage
VI/O
–0.3 to VCC + 0.3
V
Operating temperature
Topr
–40 to +85
°C
Storage temperature
Tstg
–55 to +125
°C
Specifications
Maximum Ratings at Ta = 25°C


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