2N4033UA datasheet(2/6 Pages) MICROSEMI

部品番号	2N4033UA

部品情報	PNP SILICON SWITCHING TRANSISTOR

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メーカー	MICROSEMI [Microsemi Corporation]

ホームページ	http://www.microsemi.com

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TECHNICAL DATA SHEET

6 Lake Street, Lawrence, MA 01841

Gort Road Business Park, Ennis, Co. Clare, Ireland.

1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803

Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298

Website: http://www.microsemi.com

T4-LDS-0157 Rev. 2 (101305)

Page 2 of 6

ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted)

Parameters / Test Conditions

Symbol

Min.

Max.

Unit

ON CHARACTERISTICS

(3)

Forward-Current Transfer Ratio

hFE

IC = 100μAdc, VCE = 5.0Vdc

50

IC = 100mAdc, VCE = 5.0Vdc

100

300

IC = 500mAdc, VCE = 5.0Vdc

70

IC = 1.0Adc, VCE = 5.0Vdc

25

IC = 500mAdc, VCE = 5.0Vdc, TA = -55°C

30

Collector-Emitter Saturation Voltage

VCE(sat)

Vdc

IC = 150mAdc, IB = 15mAdc

IC = 500mAdc, IB = 50mAdc

IC = 1.0Adc, IB = 100mAdc

0.15

0.50

1.0

Base-Emitter Voltage

VBE(sat)

Vdc

IC = 150mAdc, IB = 15mAdc

IC = 500mAdc, IB = 50mAdc

0.9

1.2

DYNAMIC CHARACTERISTICS

Parameters / Test Conditions

Symbol

Min.

Max.

Unit

Magnitude of Common Emitter Small–Signal Short-Circuit Forward

Current Transfer Ratio

|hfe|

IC = 50mAdc, VCE = 10Vdc, f = 100MHz

1.5

6.0

Output Capacitance

Cobo

20

pF

VCB = 10Vdc, IE = 0, 100kHz ≤ f ≤ 1.0MHz

Input Capacitance

Cibo

80

pF

VEB = 0.5Vdc, IC = 0, 100kHz ≤ f ≤ 1.0MHz

SWITCHING CHARACTERISTICS

Parameters / Test Conditions

Symbol

Min.

Max.

Unit

On-Time

VCC = 31.9Vdc; IC = 500mAdc; IB1 = 50mAdc

td

15

ηs

Rise Time

VCC = 31.9Vdc; IC = 500mAdc; IB1 = 50mAdc

tr

25

ηs

Storage Time

VCC = 31.9V, IC = 500madc, IB1 = 50mAdc

ts

175

ηs

Fall Time

VCC = 31.9V, IC = 500madc, IB1 = 50mAdc

tf

35

ηs

(4) Pulse Test: Pulse Width = 300

μs, Duty Cycle ≤ 2.0%.

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