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6N40 データシート(PDF) 2 Page - Unisonic Technologies |
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6N40 データシート(HTML) 2 Page - Unisonic Technologies |
2 / 6 page 6N40 Preliminary Power MOSFET UNISONICTECHNOLOGIESCO.,LTD 2 of 6 www.unisonic.com.tw QW-R502-487 .a ABSOLUTE MAXIMUM RATINGS (TC = 25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 400 V Gate-Source Voltage VGSS ±30 V Avalanche Current (Note 1) IAR 6 A Continuous ID 6 (Note 6) A Drain Current Pulsed (Note 1) IDM 24(Note 6) A Single Pulsed (Note 2) EAS 270 mJ Avalanche Energy Repetitive (Note 1) EAR 7.3 mJ Peak Diode Recovery dv/dt (Note 3) dv/dt 4.5 V/ns Power Dissipation PD 38 W Junction Temperature TJ +150 °C Storage Temperature TSTG -55 ~ +150 °C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. THERMAL DATA PARAMETER SYMBOL RATINGS UNIT Junction to Ambient θJA 62.5 °C/W Junction to Case θJC 3.31 °C/W |
同様の部品番号 - 6N40 |
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同様の説明 - 6N40 |
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