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FAN6300A データシート(PDF) 3 Page - Fairchild Semiconductor

部品番号 FAN6300A
部品情報  Highly Integrated Quasi-Resonant PWM Controller
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メーカー  FAIRCHILD [Fairchild Semiconductor]
ホームページ  http://www.fairchildsemi.com
Logo FAIRCHILD - Fairchild Semiconductor

FAN6300A データシート(HTML) 3 Page - Fairchild Semiconductor

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AN-6300
APPLICATION NOTE
© 2009 Fairchild Semiconductor Corporation
www.fairchildsemi.com
Rev. 1.0.2 • 5/21/10
3
Design Procedure for the Primary-Side Inductance of Transformer
In this section, a design procedure is described using the
schematic of Figure 1 as a reference.
[a] Define the System Specifications
Line voltage range (Vin,min and Vin,max)
Maximum output power (Po).
Output voltage (Vo) and maximum output current (Io)
Estimated efficiency (η)
The power conversion efficiency must be estimated to
calculate the maximum input power. In the case of NB
adaptor applications, the typical efficiency is 85%~90%.
With the estimated efficiency, the maximum input power
is given by:
o
in
P
P=
η
(1)
[b] Estimate Reflected Output Voltage
Figure 3 shows the typical waveforms of the drain voltage
of quasi-resonant flyback converter. When the MOSFET
is turned off, the DC link voltage (Vo), together with the
output voltage (Vo) and the forward voltage drop of the
Schottky diode (Vd) reflected to the primary, are imposed
on the MOSFET. The maximum nominal voltage across
the MOSFET (Vds) is:
ds,max
in,max
o
d
VV
+ n V +V
=(
)
(2)
where the turns ratio of primary to secondary side of
transformer is defined as n and Vds is as specified in
Equation 2.
By increasing n, the capacitive switching loss and
conduction loss of the MOSFET is reduced. However, this
increases the voltage stress on the MOSFET as shown in
Figure 3. Therefore, determine n by a trade-off between
the voltage margin of the MOSFET and the efficiency.
Typically, a turn-off voltage spike of Vds is considered as
100V, thus Vds,max is designed around 490~550V
(75~85% of MOSFET rated voltage).
[c] Determine the Transformer Primary-side
Inductance (LP)
Figure 4 shows the typical waveforms of MOSFET drain
current (Ids), secondary diode current (Id), and the
MOSFET drain voltage (Vds) of a QR converter. During
tOFF, the current flows through the secondary side rectifier
diode. When Id reduces to zero, Vds begins to drop by the
resonance between the effective output capacitor of the
MOSFET and the primary-side inductance (LP). To
minimize the switching loss, the FAN6300/A/H is
designed to turn on the MOSFET when Vds reaches its
minimum voltage Vin-n(Vo+Vd).
Vin
+
-
Vo
+
-
Coss
Vds
+
-
+
-
Vds
Vin,max
n(Vo+Vd)
Vds
0V
n(Vo+Vd)
n(Vo+Vd)
n(Vo+Vd)
+-
Vd
n(Vo+Vd)
n:1
Figure 3. Typical Waveform of MOSFET Drain Voltage
for QR Operation
Ids
Id
Vds
Vin
Vin+n(Vo+Vd)
tON
tOFF
tF
TS
n(Vo+Vd)
Vin-n(Vo+Vd)
n(Vo+Vd)
Iin
Ids
pk
DTs
Figure 4. Typical Waveform of QR Operation


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