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FMD47-06KC5 データシート(PDF) 1 Page - IXYS Corporation |
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FMD47-06KC5 データシート(HTML) 1 Page - IXYS Corporation |
1 / 3 page © 2009 IXYS All rights reserved 1 - 3 20090209a FMD 47-06KC5 FDM 47-06KC5 IXYS reserves the right to change limits, test conditions and dimensions. Advanced Technical Information MOSFET T Symbol Conditions Maximum Ratings V DSS T VJ = 25°C 600 V V GS ± 20 V I D25 I D90 T C = 25°C T C = 90°C 47 32 A A E AS E AR single pulse repetitive 1950 3 mJ mJ dV/dt MOSFET dV/dt ruggedness V DS = 0...480 V 50 V/ns I D = 11 A; TC = 25°C Symbol Conditions Characteristic Values (T VJ = 25°C, unless otherwise specified) min. typ. max. R DSon V GS = 10 V; ID = 44 A 40 45 m Ω V GS(th) V DS = VGS; ID = 3 mA 2.5 3 3.5 V I DSS V DS = VDSS; VGS = 0 V T VJ = 25°C T VJ = 125°C 50 10 µA µA I GSS V GS = ± 20 V; VDS = 0 V 100 nA C iss C oss V GS = 0 V; VDS = 100 V f = 1 MHz 6800 320 pF pF Q g Q gs Q gd V GS = 0 to 10 V; VDS = 400 V; ID = 44 A 150 35 50 190 nC nC nC t d(on) t r t d(off) t f E on E off E rec off V GS = 10 V; VDS = 400 V I D = 44 A; RG = 3.3 Ω 30 20 100 10 tbd tbd tbd ns ns ns ns mJ mJ mJ R thJC R thCH with heat transfer paste 0.25 0.45 K/W K/W 1) CoolMOS™ is a trademark of Infineon Technologies AG. I D25 = 47 A V DSS = 600 V R DS(on) max = 0.045 Ω CoolMOS™ 1) Pow er MOSFET with HiPerDyn™ FRED Buck and Boost Topologies Electrically isolated back surface 2500 V electrical isolation N-Channel Enhancement Mode Low R DSon, high VDSS MOSFET Ultra low gate charge ISOPLUS i4™ 1 5 isolated back surface E72873 FMD 4 3 1 2 D T Features • Silicon chip on Direct-Copper-Bond substrate - high power dissipation - isolated mounting surface - 2500 V electrical isolation - low drain to tab capacitance (< 40 pF) • Fast CoolMOS™ 1) power MOSFET 4th generation - high blocking capability - lowest resistance - avalanche rated for unclamped inductive switching (UIS) - low thermal resistance due to reduced chip thickness • Enhanced total power density • HiPerDyn™ FRED - consisting of series connected diodes - enhanced dynamic behaviour for high frequency operation Applications • Switched mode power supplies (SMPS) • Uninterruptible power supplies (UPS) • Power factor correction (PFC) Advantages • Easy assembly: no screws or isolation foils required • Space savings • High power density • High reliability FDM 5 3 4 2 D T |
同様の部品番号 - FMD47-06KC5 |
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同様の説明 - FMD47-06KC5 |
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