BCW66F datasheet(1/7 Pages) INFINEON

部品番号	BCW66F

部品情報	NPN Silicon AF Transistors

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メーカー	INFINEON [Infineon Technologies AG]

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2007-04-20

1

BCW66

1

2

3

NPN Silicon AF Transistors

• For general AF applications

• High current gain

• Low collector-emitter saturation voltage

• Complementary type: BCW68 (PNP)

• Pb-free (RoHS compliant) package1)

• Qualified according AEC Q101

Type

Marking

Pin Configuration

Package

BCW66F

BCW66KF*

BCW66G

BCW66KG*

BCW66H

BCW66KH*

EFs

EGs

EHs

1=B

2=E

3=C

SOT23

* Shrinked chip version

Maximum Ratings

Parameter

Symbol

Value

Unit

Collector-emitter voltage

VCEO

45

V

Collector-base voltage

VCBO

75

Emitter-base voltage

VEBO

5

Collector current

IC

800

mA

Peak collector current

ICM

1

A

Base current

IB

100

mA

Peak base current

IBM

200

Total power dissipation-

TS ≤ 79 °C, BCW66

TS ≤ 115 °C, BCW66K

Ptot

330

500

mW

Junction temperature

Tj

150

°C

Storage temperature

Tstg

-65 ... 150

1Pb-containing package may be available upon special request

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