データシートサーチシステム |
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BF517 データシート(PDF) 1 Page - Infineon Technologies AG |
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BF517 データシート(HTML) 1 Page - Infineon Technologies AG |
1 / 7 page 2007-04-20 1 BF517 1 2 3 NPN Silicon RF Transistor • For amplifier and oscillator applications in TV-tuners • Pb-free (RoHS compliant) package1) • Qualified according AEC Q101 ESD (Electrostatic discharge) sensitive device, observe handling precaution! Type Marking Pin Configuration Package BF517 LRs 1 = B 2 = E 3 = C SOT23 Maximum Ratings Parameter Symbol Value Unit Collector-emitter voltage VCEO 15 V Collector-base voltage VCBO 25 Emitter-base voltage VEBO 2.5 Collector current IC 25 mA Peak collector current ICM 50 Total power dissipation2) TS ≤ 55 °C Ptot 280 mW Junction temperature Tj 150 °C Ambient temperature TA -65 ... 150 Storage temperature Tstg -65 ... 150 Thermal Resistance Parameter Symbol Value Unit Junction - soldering point3) RthJS ≤ 340 K/W 1Pb-containing package may be available upon special request 2TS is measured on the collector lead at the soldering point to the pcb 3For calculation of RthJA please refer to Application Note Thermal Resistance |
同様の部品番号 - BF517_07 |
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同様の説明 - BF517_07 |
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