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NBXSBA024 データシート(PDF) 3 Page - ON Semiconductor |
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NBXSBA024 データシート(HTML) 3 Page - ON Semiconductor |
3 / 6 page NBXSBA024, NBXSBB024, NBXMBB024 http://onsemi.com 3 Table 5. DC CHARACTERISTICS (VDD = 2.5 V ± 5%; 3.3 V ± 10%, GND = 0 V, TA = −40°C to +85°C) (Note 2) Symbol Characteristic Conditions Min. Typ. Max. Units IDD Power Supply Current 95 105 mA VIH OE Input HIGH Voltage 2000 VDD mV VIL OE Input LOW Voltage GND − 300 800 mV IIH Input HIGH Current OE −100 +100 mA IIL Input LOW Current OE −100 +100 mA VOH Output HIGH Voltage VDD−1195 VDD−945 mV VOL Output LOW Voltage VDD−1945 VDD−1600 mV VOUTPP Output Voltage Amplitude 700 mV NOTE: Device will meet the specifications after thermal equilibrium has been established when mounted in a test socket or printed circuit board with maintained transverse airflow greater than 500 Ifpm. Electrical parameters are guaranteed only over the declared operating temperature range. Functional operation of the device exceeding these conditions is not implied. Device specification limit values are applied individually under normal operating conditions and not valid simultaneously. 2. Measurement taken with outputs terminated with 50 W to VDD − 2.0 V. See Figure 4. Table 6. AC CHARACTERISTICS (VDD = 2.5 V ± 5%; 3.3 V ± 10%, GND = 0 V, TA = −40°C to +85°C) (Note 3) Symbol Characteristic Conditions Min. Typ. Max. Units fCLKOUT Output Clock Frequency 622.08 MHz Df Frequency Stability NBXSBB024, NBXMBB024 NBXSBA024 0°C to +70°C −40°C to +85°C (Note 4) ±20 ±50 ppm FNOISE Phase−Noise Performance fCLKout = 622.08 MHz (See Figure 3) 100 Hz of Carrier −88 dBc/Hz 1 kHz of Carrier −108 dBc/Hz 10 kHz of Carrier −115 dBc/Hz 100 kHz of Carrier −116 dBc/Hz 1 MHz of Carrier −122 dBc/Hz 10 MHz of Carrier −149 dBc/Hz tjit(F) RMS Phase Jitter 12 kHz to 20 MHz 0.5 0.7 ps tjitter Cycle to Cycle, RMS 1000 Cycles 1.5 8 ps Cycle to Cycle, Peak−to−Peak 1000 Cycles 15 30 ps Period, RMS 10,000 Cycles 1 4 ps Period, Peak−to−Peak 10,000 Cycles 10 20 ps tOE/OD Output Enable/Disable Time 200 ns tDUTY_CYCLE Output Clock Duty Cycle (Measured at Cross Point) 45 50 55 % tR Output Rise Time (20% and 80%) 250 400 ps tF Output Fall Time (80% and 20%) 250 400 ps tstart Start−up Time 1 5 ms Aging 1st Year 3 ppm Every Year After 1st 1 ppm NOTE: Device will meet the specifications after thermal equilibrium has been established when mounted in a test socket or printed circuit board with maintained transverse airflow greater than 500 Ifpm. Electrical parameters are guaranteed only over the declared operating temperature range. Functional operation of the device exceeding these conditions is not implied. Device specification limit values are applied individually under normal operating conditions and not valid simultaneously. 3. Measurement taken with outputs terminated with 50 W to VDD − 2.0 V. See Figure 4. 4. Parameter guarantee 10 years aging. Includes initial stability at 25°C, shock, vibration, and first year aging. |
同様の部品番号 - NBXSBA024 |
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同様の説明 - NBXSBA024 |
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