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NBXSBA024 データシート(PDF) 3 Page - ON Semiconductor

部品番号 NBXSBA024
部品情報  2.5 V / 3.3 V, 622.08 MHz LVPECL Clock Oscillator LVPECL Differential Output
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メーカー  ONSEMI [ON Semiconductor]
ホームページ  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

NBXSBA024 データシート(HTML) 3 Page - ON Semiconductor

  NBXSBA024 Datasheet HTML 1Page - ON Semiconductor NBXSBA024 Datasheet HTML 2Page - ON Semiconductor NBXSBA024 Datasheet HTML 3Page - ON Semiconductor NBXSBA024 Datasheet HTML 4Page - ON Semiconductor NBXSBA024 Datasheet HTML 5Page - ON Semiconductor NBXSBA024 Datasheet HTML 6Page - ON Semiconductor  
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NBXSBA024, NBXSBB024, NBXMBB024
http://onsemi.com
3
Table 5. DC CHARACTERISTICS (VDD = 2.5 V ± 5%; 3.3 V ± 10%, GND = 0 V, TA = −40°C to +85°C) (Note 2)
Symbol
Characteristic
Conditions
Min.
Typ.
Max.
Units
IDD
Power Supply Current
95
105
mA
VIH
OE Input HIGH Voltage
2000
VDD
mV
VIL
OE Input LOW Voltage
GND − 300
800
mV
IIH
Input HIGH Current
OE
−100
+100
mA
IIL
Input LOW Current
OE
−100
+100
mA
VOH
Output HIGH Voltage
VDD−1195
VDD−945
mV
VOL
Output LOW Voltage
VDD−1945
VDD−1600
mV
VOUTPP
Output Voltage Amplitude
700
mV
NOTE: Device will meet the specifications after thermal equilibrium has been established when mounted in a test socket or printed circuit
board with maintained transverse airflow greater than 500 Ifpm. Electrical parameters are guaranteed only over the declared
operating temperature range. Functional operation of the device exceeding these conditions is not implied. Device specification limit
values are applied individually under normal operating conditions and not valid simultaneously.
2. Measurement taken with outputs terminated with 50 W to VDD − 2.0 V. See Figure 4.
Table 6. AC CHARACTERISTICS (VDD = 2.5 V ± 5%; 3.3 V ± 10%, GND = 0 V, TA = −40°C to +85°C) (Note 3)
Symbol
Characteristic
Conditions
Min.
Typ.
Max.
Units
fCLKOUT
Output Clock Frequency
622.08
MHz
Df
Frequency Stability
NBXSBB024, NBXMBB024
NBXSBA024
0°C to +70°C
−40°C to +85°C
(Note 4)
±20
±50
ppm
FNOISE
Phase−Noise Performance
fCLKout = 622.08 MHz
(See Figure 3)
100 Hz of Carrier
−88
dBc/Hz
1 kHz of Carrier
−108
dBc/Hz
10 kHz of Carrier
−115
dBc/Hz
100 kHz of Carrier
−116
dBc/Hz
1 MHz of Carrier
−122
dBc/Hz
10 MHz of Carrier
−149
dBc/Hz
tjit(F)
RMS Phase Jitter
12 kHz to 20 MHz
0.5
0.7
ps
tjitter
Cycle to Cycle, RMS
1000 Cycles
1.5
8
ps
Cycle to Cycle, Peak−to−Peak
1000 Cycles
15
30
ps
Period, RMS
10,000 Cycles
1
4
ps
Period, Peak−to−Peak
10,000 Cycles
10
20
ps
tOE/OD
Output Enable/Disable Time
200
ns
tDUTY_CYCLE
Output Clock Duty Cycle
(Measured at Cross Point)
45
50
55
%
tR
Output Rise Time (20% and 80%)
250
400
ps
tF
Output Fall Time (80% and 20%)
250
400
ps
tstart
Start−up Time
1
5
ms
Aging
1st Year
3
ppm
Every Year After 1st
1
ppm
NOTE: Device will meet the specifications after thermal equilibrium has been established when mounted in a test socket or printed circuit
board with maintained transverse airflow greater than 500 Ifpm. Electrical parameters are guaranteed only over the declared
operating temperature range. Functional operation of the device exceeding these conditions is not implied. Device specification limit
values are applied individually under normal operating conditions and not valid simultaneously.
3. Measurement taken with outputs terminated with 50 W to VDD − 2.0 V. See Figure 4.
4. Parameter guarantee 10 years aging. Includes initial stability at 25°C, shock, vibration, and first year aging.


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