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2N7002KW データシート(PDF) 1 Page - SeCoS Halbleitertechnologie GmbH

部品番号 2N7002KW
部品情報  N-Ch Small Signal MOSFET with ESD Protection
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メーカー  SECOS [SeCoS Halbleitertechnologie GmbH]
ホームページ  http://www.secosgmbh.com
Logo SECOS - SeCoS Halbleitertechnologie GmbH

2N7002KW データシート(HTML) 1 Page - SeCoS Halbleitertechnologie GmbH

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2N7002KW
115mA , 60V, RDS(ON) 4 
N-Ch Small Signal MOSFET with ESD Protection
Elektronische Bauelemente
31-Mar-2011 Rev. A
Page 1 of 4
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
SOT-323
Top View
A
L
C B
D
G
H
J
F
K
E
1
2
3
1
2
3
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
FEATURES
RDS(ON), VGS@10V, IDS@500mA=3
RDS(ON), VGS@4.5V, IDS@200mA=4
Advanced Trench Process Technology
High Density Cell Design For Ultra Low On-Resistance
Very Low Leakage Current In Off Condition
Specially Designed for Battery Operated Systems,
Solid-State Relays Drivers:Relays, Displays, Lamps,
Solenoids, Memories, etc.
ESD Protected 2KV HBM
In compliance with EU RoHS 2002/95/EC directives
MECHANICAL DATA
Case: SOT-323 Package
Terminals: Solderable per MIL-STD-750,
Method 2026
MARKING
K72
PACKAGE INFORMATION
Package
MPQ
LeaderSize
SOT-323
3K
7’ inch
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified)
Parameter
Symbol
Rating
Unit
Drain-Source Voltage
VDS
60
V
Gate-Source Voltage
VGS
±20
V
Continuous Drain Current
ID
115
mA
Pulsed Drain Current
1
IDM
800
mA
Maximum Power Dissipation
TA=25°C
PD
200
mW
TA=75°C
120
Thermal Resistance Junction-Ambient (PCB mounted)
2
RJA
625
°C / W
Operating Junction and Storage Temperature
TJ, TSTG
-55~150
°C
Notes:
1. Maximum DC current limited by the package.
2. Surface mounted on FR4 board, t < 5sec.

Gate

Source
Drain

REF.
Millimeter
REF.
Millimeter
Min.
Max.
Min.
Max.
A
1.80
2.20
G
0.100 REF.
B
1.80
2.45
H
0.525 REF.
C
1.15
1.35
J
0.08
0.25
D
0.80
1.10
K
-
-
E
1.20
1.40
L
0.650 TYP.
F
0.20
0.40


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