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BC847S データシート(PDF) 2 Page - SeCoS Halbleitertechnologie GmbH |
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BC847S データシート(HTML) 2 Page - SeCoS Halbleitertechnologie GmbH |
2 / 3 page Any changing of specification will not be informed individual BC847S NPN Silicon Multi-Chip Transistor http://www.SeCoSGmbH.com Elektronische Bauelemente Typical Characteristics Collector-Emitter Saturation Voltage vs Collector Current 0.1 1 10 100 0.05 0.1 0.15 0.2 0.25 0.3 I - COLLECTOR CURRENT (mA) C 25 °C - 40 °C 125 °C β = 10 Typical Pulsed Current Gain vs Collector Current 0.01 0.03 0.1 0.3 1 3 10 30 100 0 200 400 600 800 1000 1200 I - COLLECTOR CURRENT (mA) C 125 °C 25 °C - 40 °C V = 5.0 V CE Base-Emitter Saturation Voltage vs Collector Current 0.1 1 10 100 0.2 0.4 0.6 0.8 1 I - COLLECTOR CURRENT (mA) C β = 10 25 °C - 40 °C 125 °C Base-Emitter ON Voltage vs Collector Current 0.1 1 10 40 0.2 0.4 0.6 0.8 1 I - COLLECTOR CURRENT (mA) C V = 5.0 V CE 25 °C - 40 °C 125 °C Contours of Constant Gain Bandwidth Product (f ) 0.1 1 10 100 1 2 3 5 7 10 I - COLLECTOR CURRENT (mA) C 175 MHz T 150 MHz 125 MHz 75 MHz 100 MHz Normalized Collect or-Cutoff Curre nt vs Ambient Temperature 25 50 75 100 125 150 1 10 100 1000 T - AMBIE NT TEMP ERATURE ( C) A ° 01-Jan-2006 Rev. B Page 2 of 3 |
同様の部品番号 - BC847S |
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同様の説明 - BC847S |
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